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6 W RF Power Field Effect Transistors (FET) 2

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD84002 by STMicroelectronics

PD84002

STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.

SOURCE

SINGLE

25 V

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PSSO-F3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

6 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

SINGLE

AMPLIFIER

SILICON

PD85004 by STMicroelectronics

PD85004

STMicroelectronics

STMicroelectronics PD85004 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a plastic/epoxy package, flat terminals, and can handle up to 6W power dissipation at 150°C.

SOURCE

SINGLE

40 V

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PSSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

6 W

Not Qualified

FET General Purpose Power

YES

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON