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160 W RF Power Field Effect Transistors (FET) 2

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
LET9045STR by STMicroelectronics

LET9045STR

STMicroelectronics

LET9045STR by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 5A Drain Current and 160W Power Dissipation. Ideal for small outline packages requiring high power handling capabilities.

HIGH RELIABILITY

SOURCE

SINGLE

80 V

5 A

9 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

160 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

AMPLIFIER

SILICON

LET9045S by STMicroelectronics

LET9045S

STMicroelectronics

LET9045S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Ideal for compact, high-performance circuits.

HIGH RELIABILITY

SOURCE

SINGLE

80 V

5 A

9 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

160 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

AMPLIFIER

SILICON