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93.75 W Power Field Effect Transistors (FET) 9

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD32N06 by Onsemi

NTD32N06

Onsemi

NTD32N06 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 93.75W and can handle up to 90A pulsed drain current.

313 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

32 A

32 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

93.75 W

90 A

Not Qualified

FET General Purpose Powers

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD32N06-1G by Onsemi

NTD32N06-1G

Onsemi

NTD32N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high performance with 90A Pulsed Drain Current capability.

313 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

32 A

32 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

93.75 W

90 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD32N06G by Onsemi

NTD32N06G

Onsemi

NTD32N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm RDS(ON). Ideal for switching applications, it features an Enhancement Mode in a small outline package with Gull Wing terminals. Operating at up to 175 °C, it has a max power dissipation of 93.75W.

313 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

32 A

32 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

93.75 W

90 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD32N06T4G by Onsemi

NTD32N06T4G

Onsemi

NTD32N06T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm RDS(ON). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 93.75W at 175 °C.

313 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

32 A

32 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

93.75 W

90 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD32N06LT4G by Onsemi

NTD32N06LT4G

Onsemi

NTD32N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.028 ohm RDS(ON). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 93.75W and can handle up to 90A pulsed drain current.

LOGIC LEVEL COMPATIBLE

313 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

32 A

32 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

93.75 W

90 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

40

SWITCHING

SILICON

NTD32N06LG by Onsemi

NTD32N06LG

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 93.75 W; Maximum Drain-Source On Resistance: .028 ohm; Avalanche Energy Rating (EAS): 313 mJ;

LOGIC LEVEL COMPATIBLE

313 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

32 A

32 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

93.75 W

90 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD32N06L-1G by Onsemi

NTD32N06L-1G

Onsemi

NTD32N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 90A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. The transistor has a max power dissipation of 93.75W and operates at temperatures up to 175 °C.

LOGIC LEVEL COMPATIBLE

313 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

32 A

32 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

93.75 W

90 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD4804N-1G by Onsemi

NTD4804N-1G

Onsemi

NTD4804N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 230A IDM, and 0.0055 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a max power dissipation of 93.75W in a RECTANGULAR package.

450 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

117 A

14.5 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

93.75 W

230 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD4804NT4G by Onsemi

NTD4804NT4G

Onsemi

NTD4804NT4G by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 230A and EAS of 450mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and low 0.0055 ohm RDS(on), it offers high power dissipation up to 93.75W at 175°C.

450 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

117 A

14.5 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

93.75 W

230 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON