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88 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTBV5605T4G by Onsemi

NTBV5605T4G

Onsemi

The Onsemi NTBV5605T4G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 55A IDM and 0.14 ohm RDS(ON), suitable for high-power operations. With a max power dissipation of 88W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

18.5 A

18.5 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

88 W

55 A

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NVD6824NLT4G by Onsemi

NVD6824NLT4G

Onsemi

NVD6824NLT4G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 231A IDM, and 0.023 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

41 A

8.5 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

88 W

231 A

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

NTB5605T4G by Onsemi

NTB5605T4G

Onsemi

NTB5605T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 55A.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

18.5 A

18.5 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

88 W

55 A

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NP60N03KUG-E1-AY by Renesas Electronics

NP60N03KUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 60 A;

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

88 W

FET General Purpose Power

YES

NOT SPECIFIED

NP60N04KUG-E1-AY by Renesas Electronics

NP60N04KUG-E1-AY

Renesas Electronics

NP60N04KUG-E1-AY by Renesas Electronics is a N-CHANNEL FET with 60A max drain current and 88W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

88 W

FET General Purpose Power

YES

NOT SPECIFIED

TK65S04K3L(T6L1,NQ) by Toshiba

TK65S04K3L(T6L1,NQ)

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 65 A;

130 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

65 A

65 A

.0079 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

88 W

130 A

AEC-Q101

YES

GULL WING

SINGLE

SWITCHING

SILICON

DMNH15H110SK3-13 by Diodes Incorporated

DMNH15H110SK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Terminal Form: GULL WING; No. of Terminals: 2;

121.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

18 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

34 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

88 W

72 A

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON