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753 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTH4L015N065SC1 by Onsemi

NTH4L015N065SC1

Onsemi

NTH4L015N065SC1 by Onsemi is a Power FET with 650V DS Breakdown Voltage, 859A IDM, and 753W Max Power Dissipation. Ideal for high-power applications requiring N-CHANNEL configuration in RECTANGULAR package style with SILICON CARBIDE element material.

SINGLE WITH BUILT-IN DIODE

650 V

164 A

164 A

METAL-OXIDE SEMICONDUCTOR

39.33 pF

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

753 W

859 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SILICON CARBIDE

NVH4L015N065SC1 by Onsemi

NVH4L015N065SC1

Onsemi

NVH4L015N065SC1 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage. It has a max IDM of 859A and ID of 164A, making it suitable for high-power applications. With a package style of FLANGE MOUNT, it operates in temperatures ranging from -55 to 175 °C, ideal for power electronics.

SINGLE WITH BUILT-IN DIODE

650 V

164 A

164 A

METAL-OXIDE SEMICONDUCTOR

39.33 pF

TO-247

R-PSFM-T4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

753 W

859 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SILICON CARBIDE