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72 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STL66DN3LLH5 by STMicroelectronics

STL66DN3LLH5

STMicroelectronics

STL66DN3LLH5 by STMicroelectronics is an N-CHANNEL Power FET with 78.5A max drain current and 72W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.

78.5 A

78.5 A

METAL-OXIDE SEMICONDUCTOR

e3

1

175 Cel

260

N-CHANNEL

72 W

FET General Purpose Powers

YES

Matte Tin (Sn) - annealed

30

IRF630B_FP001 by Fairchild Semiconductor

IRF630B_FP001

Fairchild Semiconductor

Fairchild Semiconductor's IRF630B_FP001 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.4 ohm RDS(on), and 72W Pdiss.

160 mJ

SINGLE WITH BUILT-IN DIODE

200 V

9 A

9 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

72 W

36 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FDD5810_F085 by Fairchild Semiconductor

FDD5810_F085

Fairchild Semiconductor

FDD5810_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 37A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.022 ohm.

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

37 A

7.4 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

72 W

Not Qualified

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

IPW65R190C7XKSA1 by Infineon Technologies

IPW65R190C7XKSA1

Infineon Technologies

IPW65R190C7XKSA1 by Infineon is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 49A and EAS of 57mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.19 ohm RDS(on) and can handle up to 72W power dissipation at temperatures ranging from -55 to 150°C.

57 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

13 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

72 W

49 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVATS5A108PLZT4G by Onsemi

NVATS5A108PLZT4G

Onsemi

NVATS5A108PLZT4G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 231A IDM, 95mJ EAS, and 0.0104 ohm Drain-Source Resistance. With a temperature range of -55 to 175 °C, it is suitable for automotive electronics meeting AEC-Q101 standards.

95 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

77 A

77 A

.0104 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

72 W

231 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

NVATS5A114PLZT4G by Onsemi

NVATS5A114PLZT4G

Onsemi

NVATS5A114PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM and 0.016 ohm RDS(ON), suitable for high-power operations. With a small outline package and AEC-Q101 standard, it ensures reliable performance in automotive electronics.

100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

60 A

60 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

72 W

180 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

NVATS4A104PZT4G by Onsemi

NVATS4A104PZT4G

Onsemi

NVATS4A104PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 246A IDM, 130mJ EAS, and 0.0084 ohm RDS(ON). With a temperature range of -55 to 175 °C, it is suitable for automotive (AEC-Q101) and industrial applications.

130 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

82 A

82 A

.0084 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

72 W

246 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

DMTH45M5SPSWQ-13 by Diodes Incorporated

DMTH45M5SPSWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 72 W; Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202; Maximum Drain Current (ID): 86 A;

20.6 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

86 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

72 W

344 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

SWITCHING

SILICON