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69 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN3R8-30LL,115 by NXP Semiconductors

PSMN3R8-30LL,115

NXP Semiconductors

PSMN3R8-30LL,115 by NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 40 A and power dissipation of 69 W, making it ideal for high-efficiency applications in automotive and industrial sectors. With an operating temp up to 150 °C, it ensures reliable performance in demanding environments.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

69 W

FET General Purpose Power

YES

BSZ023N04LSATMA1 by Infineon Technologies

BSZ023N04LSATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Drain Current (Abs) (ID): 40 A; Terminal Position: DUAL;

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

130 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

40 A

22 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F8

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

69 W

160 A

FET General Purpose Power

YES

FLAT

DUAL

SWITCHING

SILICON

SI7790DP-T1-GE3 by Vishay Intertechnology

SI7790DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7790DP-T1-GE3 is an N-channel FET with a built-in diode, ideal for switching applications. It features a 40V DS breakdown voltage, 70A max pulsed drain current, and 0.0045 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates at up to 150°C for enhanced performance.

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

50 A

50 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

69 W

70 A

Not Qualified

FET General Purpose Powers

YES

Matte Tin (Sn)

C BEND

DUAL

30

SWITCHING

SILICON

BSC037N025SG by Infineon Technologies

BSC037N025SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Terminal Position: DUAL; JESD-609 Code: e3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

100 A

21 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

69 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

FDD4685-F085 by Onsemi

FDD4685-F085

Onsemi

FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.

ULTRA-LOW RESISTANCE

121 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

40 A

32 A

.027 ohm

METAL-OXIDE SEMICONDUCTOR

205 pF

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

69 W

100 A

Not Qualified

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

81 ns

43 ns

NTMFS5H425NLT1G by Onsemi

NTMFS5H425NLT1G

Onsemi

NTMFS5H425NLT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 650A IDM, and 0.0043 ohm RDS(on). Ideal for power applications in small outline packages, operating from -55 to 150 °C.

289 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

118 A

118 A

.0043 ohm

METAL-OXIDE SEMICONDUCTOR

32 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

69 W

650 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTTFS003N04CTAG by Onsemi

NTTFS003N04CTAG

Onsemi

NTTFS003N04CTAG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 484A IDM, and 0.0035 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Operating temperature range from -55 to 175 °C makes it suitable for various industrial uses.

155 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

103 A

22 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

69 W

484 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NXH80B120MNQ0SNG by Onsemi

NXH80B120MNQ0SNG

Onsemi

NXH80B120MNQ0SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode and operates in enhancement mode. With a max pulsed drain current of 69A and max power dissipation of 69W, this MOSFET is designed for high-power applications.

ISOLATED

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

1200 V

23 A

23 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X22

e3

2

22

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

69 W

69 A

NO

Matte Tin (Sn) - annealed

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE