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62.5 W Power Field Effect Transistors (FET) 18

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STD24N06LT4G by Onsemi

STD24N06LT4G

Onsemi

STD24N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 24A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.045 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount designs with a max power dissipation of 62.5W at 175 °C.

162 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

24 A

24 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62.5 W

72 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STL20DN10F7 by STMicroelectronics

STL20DN10F7

STMicroelectronics

STL20DN10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for SWITCHING applications. It features 20A max drain current, 0.067 ohm RDS(on), and operates in the -55 to 150 °C temperature range. Suitable for high-power switching circuits requiring efficient performance.

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

100 V

20 A

12.3 A

.067 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

62.5 W

20 A

FET General Purpose Powers

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STL51N3LLH5 by STMicroelectronics

STL51N3LLH5

STMicroelectronics

STL51N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 51A max drain current and 62.5W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.

SINGLE

51 A

51 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

62.5 W

FET General Purpose Power

YES

NOT SPECIFIED

STL105NS3LLH7 by STMicroelectronics

STL105NS3LLH7

STMicroelectronics

STL105NS3LLH7 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 420A IDM, 0.0055 ohm RDS(on), and 62.5W Power Dissipation in a SMALL OUTLINE package suitable for ENHANCEMENT MODE operation at -55 to 150 °C.

BULK: 3000

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

105 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

R-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

62.5 W

420 A

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTD24N06-1G by Onsemi

NTD24N06-1G

Onsemi

NTD24N06-1G by Onsemi is a single N-channel power FET with 24A max drain current and 62.5W max power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as motor control and power supplies. Operating at up to 175°C, it features metal-oxide semiconductor technology and surface-mount capability for efficient performance.

SINGLE

24 A

24 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

260

N-CHANNEL

62.5 W

FET General Purpose Power

YES

TIN

PH3830L,115 by NXP Semiconductors

PH3830L,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

98 A

98 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

MO-235

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

62.5 W

290 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

PH6030L,115 by NXP Semiconductors

PH6030L,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Transistor Element Material: SILICON; No. of Terminals: 4;

95 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

76.7 A

76.7 A

.0097 ohm

METAL-OXIDE SEMICONDUCTOR

MO-235

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

62.5 W

300 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

PHX45NQ11T,127 by NXP Semiconductors

PHX45NQ11T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62.5 W; Maximum Drain Current (Abs) (ID): 30.4 A; Transistor Element Material: SILICON;

250 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

110 V

30.4 A

30.4 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

62.5 W

121 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTP2955 by Onsemi

NTP2955

Onsemi

NTP2955 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 42A pulsed drain current, 216mJ avalanche energy rating, and 0.196 ohm max on resistance. Package style is flange mount with through-hole terminals.

216 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

2.4 A

.196 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

P-CHANNEL

62.5 W

42 A

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB65N02RG by Onsemi

NTB65N02RG

Onsemi

NTB65N02RG by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM and 60mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 62.5W and small outline package style, it offers efficient performance up to 150 °C.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

65 A

7.6 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62.5 W

160 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB65N02RT4G by Onsemi

NTB65N02RT4G

Onsemi

NTB65N02RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 160A IDM, and 0.0105 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 62.5W.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

65 A

7.6 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62.5 W

160 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTP2955G by Onsemi

NTP2955G

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62.5 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

216 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

2.4 A

.196 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

P-CHANNEL

62.5 W

42 A

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSC042N03SG by Infineon Technologies

BSC042N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-30 Code: R-PDSO-F8; Maximum Drain Current (ID): 20 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

95 A

20 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62.5 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

NTD24N06G by Onsemi

NTD24N06G

Onsemi

NTD24N06G by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 60V DS Breakdown Voltage, 80A IDM, and 0.042 ohm RDS(on). With a max power dissipation of 62.5W and operating temperature up to 175 °C, it is suitable for high-power electronic devices.

162 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

27 A

24 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62.5 W

80 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

DMT6005LFG-13 by Diodes Incorporated

DMT6005LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Reference Standard: MIL-STD-202; JESD-609 Code: e3;

171 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

100 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

69 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

62.5 W

400 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

STL58N3LLH5 by STMicroelectronics

STL58N3LLH5

STMicroelectronics

STL58N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 64 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for automotive and industrial uses, it ensures reliable performance under extreme temperatures.

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

64 A

.0112 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

62.5 W

224 A

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

SIR112DP-T1-RE3 by Vishay Intertechnology

SIR112DP-T1-RE3

Vishay Intertechnology

Vishay Intertechnology's SIR112DP-T1-RE3 is a N-channel Power FET with 40V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it features a built-in diode, 45mJ avalanche energy rating, and 0.00196 ohm max drain-source resistance.

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

133 A

133 A

.00196 ohm

METAL-OXIDE SEMICONDUCTOR

90 pF

R-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

62.5 W

200 A

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

80 ns

90 ns

DMT6005LFG-7 by Diodes Incorporated

DMT6005LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Maximum Drain-Source On Resistance: .007 ohm; Package Body Material: PLASTIC/EPOXY;

171 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

100 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

69 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

62.5 W

400 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON