Loading...

62 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STL40N75LF3 by STMicroelectronics

STL40N75LF3

STMicroelectronics

STL40N75LF3 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 160A IDM, and 0.022 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with DUAL terminals.

DRAIN

SINGLE WITH BUILT-IN DIODE

75 V

40 A

40 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

62 W

160 A

FET General Purpose Powers

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BUK9575-55A,127 by NXP Semiconductors

BUK9575-55A,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62 W; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;

72 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

20 A

20 A

.081 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

62 W

81 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTTFS012N10MD by Onsemi

NTTFS012N10MD

Onsemi

NTTFS012N10MD by Onsemi is a Power FET with 100V DS Breakdown Voltage, 217A IDM, and 0.0144 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. This N-CHANNEL transistor has a built-in diode and comes in an 8-terminal package.

121 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

45 A

.0144 ohm

METAL-OXIDE SEMICONDUCTOR

8.4 pF

S-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

62 W

217 A

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NVMFS6B25NLT1G by Onsemi

NVMFS6B25NLT1G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;

170 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

33 A

8 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62 W

177 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B25NLT3G by Onsemi

NVMFS6B25NLT3G

Onsemi

NVMFS6B25NLT3G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 177A IDM, and 0.039 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.

170 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

33 A

8 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62 W

177 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B25NLWFT1G by Onsemi

NVMFS6B25NLWFT1G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; JESD-30 Code: R-PDSO-F5; Maximum Pulsed Drain Current (IDM): 177 A;

170 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

33 A

8 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62 W

177 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B25NLWFT3G by Onsemi

NVMFS6B25NLWFT3G

Onsemi

NVMFS6B25NLWFT3G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 177A IDM, and 0.039 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

170 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

33 A

8 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

62 W

177 A

AEC-Q101

YES

TIN

FLAT

DUAL

30

SILICON

DMT3003LFG-13 by Diodes Incorporated

DMT3003LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Terminal Position: DUAL; Package Shape: SQUARE;

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

240 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

62 W

100 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMT3003LFGQ-13 by Diodes Incorporated

DMT3003LFGQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Maximum Time At Peak Reflow Temperature (s): 30; Case Connection: DRAIN;

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

240 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

62 W

100 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMT3003LFGQ-7 by Diodes Incorporated

DMT3003LFGQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62 W; Transistor Element Material: SILICON; No. of Terminals: 8;

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

240 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

62 W

100 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON