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600 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STE70NM60 by STMicroelectronics

STE70NM60

STMicroelectronics

STE70NM60 by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 280A Max Pulsed Drain Current and 0.055ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150°C.

1400 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

70 A

70 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

600 W

280 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

STE30NK90Z by STMicroelectronics

STE30NK90Z

STMicroelectronics

STE30NK90Z by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 900V breakdown voltage and 30A max drain current. It offers a low on-resistance of 0.26Ω and operates up to 150 °C. This robust FET is suitable for high-power circuits.

HIGH VOLTAGE

500 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

900 V

30 A

28 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

112 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STE45NK80ZD by STMicroelectronics

STE45NK80ZD

STMicroelectronics

STE45NK80ZD from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features an 800V breakdown voltage, 180A pulsed drain current, and a max power dissipation of 600W. Ideal for high-performance power management in various electronic devices.

1200 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

800 V

45 A

45 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

180 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STE40NK90ZD by STMicroelectronics

STE40NK90ZD

STMicroelectronics

STE40NK90ZD from STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 900V breakdown voltage and 40A max drain current. It offers high efficiency with a low on-resistance of 0.18Ω and can handle up to 600W power dissipation. Ideal for robust power management in various electronic devices.

1200 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

900 V

40 A

40 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

600 W

160 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON