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595 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FCH041N60F-F085 by Onsemi

FCH041N60F-F085

Onsemi

FCH041N60F-F085 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a max Drain Current of 76A and an Operating Temperature range of -55 to 150°C. Ideal for SWITCHING applications, this transistor features a built-in DIODE and offers high power dissipation at 595W.

2025 mJ

SINGLE WITH BUILT-IN DIODE

600 V

76 A

76 A

.041 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

595 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

514 ns

242 ns

NVH4L027N65S3F by Onsemi

NVH4L027N65S3F

Onsemi

NVH4L027N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 187.5A IDM. Ideal for applications requiring high power dissipation, such as automotive systems due to its AEC-Q101 reference standard compliance.

1610 mJ

SINGLE WITH BUILT-IN DIODE

650 V

75 A

.0274 ohm

METAL-OXIDE SEMICONDUCTOR

26 pF

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

595 W

187.5 A

AEC-Q101

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

NVHL025N65S3 by Onsemi

NVHL025N65S3

Onsemi

NVHL025N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 187.5A and EAS of 2025mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.025 ohm RDS(on) and can handle up to 595W power dissipation at temperatures ranging from -55 to 150 °C.

2025 mJ

SINGLE WITH BUILT-IN DIODE

650 V

75 A

75 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

595 W

187.5 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

FCH041N65EFLN4 by Onsemi

FCH041N65EFLN4

Onsemi

FCH041N65EFLN4 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 228A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 595W, this transistor has a 0.041 ohm Drain-Source On Resistance and can handle up to 76A ID.

2025 mJ

SINGLE WITH BUILT-IN DIODE

650 V

76 A

76 A

.041 ohm

METAL-OXIDE SEMICONDUCTOR

35 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

595 W

228 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

394 ns

180 ns

NTH4L027N65S3F by Onsemi

NTH4L027N65S3F

Onsemi

NTH4L027N65S3F by Onsemi is a Power FET with 650V DS Breakdown Voltage, 187.5A IDM, and 0.0274 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 595W and operates b/w -55 to 150 °C.

1610 mJ

SINGLE WITH BUILT-IN DIODE

650 V

75 A

75 A

.0274 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

595 W

187.5 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON