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58 W Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFD5853NT1G by Onsemi

NVMFD5853NT1G

Onsemi

NVMFD5853NT1G by Onsemi is an N-CHANNEL Power FET with 53A max drain current and 58W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.

53 A

53 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

260

N-CHANNEL

58 W

FET General Purpose Powers

YES

MATTE TIN

30

NVMFD5853NWFT1G by Onsemi

NVMFD5853NWFT1G

Onsemi

NVMFD5853NWFT1G by Onsemi is an N-CHANNEL Power FET with 53A max drain current and 58W max power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling such as motor control and power supplies.

53 A

53 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

260

N-CHANNEL

58 W

FET General Purpose Powers

YES

TIN

30

IPB34CN10NGATMA1 by Infineon Technologies

IPB34CN10NGATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Operating Temperature: 175 Cel; No. of Terminals: 2;

47 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

27 A

27 A

.034 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

58 W

108 A

Not Qualified

FET General Purpose Powers

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD33CN10NGBUMA1 by Infineon Technologies

IPD33CN10NGBUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;

47 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

27 A

27 A

.033 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

58 W

108 A

Not Qualified

FET General Purpose Powers

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2SK3058-Z-E1-AZ by Renesas Electronics

2SK3058-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

55 A

55 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

58 W

FET General Purpose Power

YES

NOT SPECIFIED

NDD03N50ZT4G by Onsemi

NDD03N50ZT4G

Onsemi

NDD03N50ZT4G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 10A IDM, and 0.0033 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operation at up to 150 °C temperature.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

2.6 A

2.6 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

58 W

10 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SILICON

SPD22N08S2L-50 by Infineon Technologies

SPD22N08S2L-50

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Operating Temperature: 175 Cel; Case Connection: DRAIN;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

94 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

75 V

22 A

18 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

58 W

100 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD09N03LBG by Infineon Technologies

IPD09N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Drain Current (Abs) (ID): 50 A; JESD-30 Code: R-PSSO-G2;

LOGIC LEVEL COMPATIBLE

57 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0142 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

58 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPB10N03LB by Infineon Technologies

IPB10N03LB

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Avalanche Energy Rating (EAS): 57 mJ; Terminal Form: GULL WING;

LOGIC LEVEL COMPATIBLE

57 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0096 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

58 W

200 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

SWITCHING

SILICON

IPP10N03LBG by Infineon Technologies

IPP10N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Maximum Pulsed Drain Current (IDM): 200 A; Terminal Form: THROUGH-HOLE;

LOGIC LEVEL COMPATIBLE

57 mJ

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0099 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

58 W

200 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU09N03LBG by Infineon Technologies

IPU09N03LBG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; No. of Elements: 1; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

57 mJ

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0144 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

58 W

200 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPI35CN10NG by Infineon Technologies

IPI35CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 100 V;

47 mJ

SINGLE WITH BUILT-IN DIODE

100 V

27 A

27 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

58 W

108 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP35CN10NG by Infineon Technologies

IPP35CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 58 W; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;

47 mJ

SINGLE WITH BUILT-IN DIODE

100 V

27 A

27 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

58 W

108 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON