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56 W Power Field Effect Transistors (FET) 9

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FQPF6N90CT by Fairchild Semiconductor

FQPF6N90CT

Fairchild Semiconductor

FQPF6N90CT by Fairchild Semiconductor is a N-CHANNEL Power FET with 6A max drain current and 56W max power dissipation. Ideal for applications requiring high power handling such as motor control systems or power supplies due to its enhancement mode operation and MOSFET technology.

SINGLE

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

56 W

FET General Purpose Power

NO

Matte Tin (Sn)

PSMN050-80PS,127 by NXP Semiconductors

PSMN050-80PS,127

NXP Semiconductors

PSMN050-80PS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power applications. It supports a max drain current of 22 A and power dissipation of 56 W, operating up to 175 °C. Perfect for efficient switching in various electronic devices.

SINGLE

22 A

22 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

56 W

FET General Purpose Power

NO

Tin (Sn)

PSMN8R0-30YL,115 by NXP Semiconductors

PSMN8R0-30YL,115

NXP Semiconductors

PSMN8R0-30YL,115 by NXP Semiconductors is a single N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 62 A and power dissipation of 56 W, operating up to 175 °C. Ideal for power management in automotive and industrial systems.

SINGLE

62 A

62 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

260

N-CHANNEL

56 W

FET General Purpose Power

YES

TIN

30

IPB065N03LGATMA1 by Infineon Technologies

IPB065N03LGATMA1

Infineon Technologies

Infineon's IPB065N03LGATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 350A IDM, 60mJ EAS, and 0.0095 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and 56W power dissipation.

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

56 W

350 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

2SK3481(0)-Z-E1-AZ by Renesas Electronics

2SK3481(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

SINGLE

30 A

30 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

56 W

FET General Purpose Power

YES

NOT SPECIFIED

NP52N055SUG-E1-AY by Renesas Electronics

NP52N055SUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 52 A;

SINGLE

52 A

52 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

56 W

FET General Purpose Power

YES

NOT SPECIFIED

IPU060N03LG by Infineon Technologies

IPU060N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

56 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFS6B75NLT1G by Onsemi

NVMFS6B75NLT1G

Onsemi

NVMFS6B75NLT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 141A IDM, and 0.046 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

177 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

28 A

7 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

56 W

141 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B75NLWFT1G by Onsemi

NVMFS6B75NLWFT1G

Onsemi

NVMFS6B75NLWFT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 141A IDM, and 0.046 ohm RDS(ON). Ideal for power applications in automotive electronics due to AEC-Q101 compliance and 177mJ EAS rating.

177 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

28 A

7 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

56 W

141 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON