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460 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STE70NM50 by STMicroelectronics

STE70NM50

STMicroelectronics

STE70NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 70A Drain Current. Ideal for SWITCHING applications, it features a max Pulsed Drain Current of 280A and an Avalanche Energy Rating of 1400mJ. Operating in ENHANCEMENT MODE, this transistor has a 0.05 ohm On Resistance and can handle up to 460W power dissipation.

1400 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

70 A

70 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

460 W

280 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

STE53NC50 by STMicroelectronics

STE53NC50

STMicroelectronics

STE53NC50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 212A Max Pulsed Drain Current and 1043mJ Avalanche Energy Rating, operating in ENHANCEMENT MODE. With a max power dissipation of 460W and 0.08ohm Drain-Source On Resistance, it offers high performance in various industrial settings.

1043 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

53 A

53 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

460 W

212 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

STE40NC60 by STMicroelectronics

STE40NC60

STMicroelectronics

STE40NC60 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 40A max drain current, and 460W power dissipation. Ideal for high-efficiency circuits in demanding environments.

1150 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

40 A

40 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

460 W

160 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

IXFP26N65X2 by Littelfuse

IXFP26N65X2

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

AVALANCHE RATED

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

26 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

1.2 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

460 W

36 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH26N65X2 by Littelfuse

IXFH26N65X2

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;

AVALANCHE RATED

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

26 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

1.2 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

460 W

36 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON