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46 W Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NDD01N60-1G by Onsemi

NDD01N60-1G

Onsemi

NDD01N60-1G by Onsemi is a N-channel Power FET with 600V DS breakdown voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance in a TO-252 package.

13 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

1.5 A

1.5 A

8.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

46 W

6 A

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

NDD01N60T4G by Onsemi

NDD01N60T4G

Onsemi

NDD01N60T4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 46W in enhancement mode operation. Suitable for use in various electronic devices due to its N-channel configuration and built-in diode.

13 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

1.5 A

1.5 A

8.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

46 W

6 A

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SILICON

PSMN9R0-30YL,115 by NXP Semiconductors

PSMN9R0-30YL,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Peak Reflow Temperature (C): 260; Terminal Form: GULL WING;

16 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

61 A

55 A

.0138 ohm

METAL-OXIDE SEMICONDUCTOR

MO-235

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

46 W

223 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

30

SWITCHING

SILICON

STD3NM50T4 by STMicroelectronics

STD3NM50T4

STMicroelectronics

STD3NM50T4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 12A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.

130 mJ

SINGLE WITH BUILT-IN DIODE

500 V

3 A

3 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

46 W

12 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STD2NM60T4 by STMicroelectronics

STD2NM60T4

STMicroelectronics

STD2NM60T4 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 8A max pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient performance in various electronic circuits.

250 mJ

SINGLE WITH BUILT-IN DIODE

600 V

2 A

2 A

3.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

46 W

8 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPB14N03LA by Infineon Technologies

IPB14N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Minimum DS Breakdown Voltage: 25 V; Terminal Finish: TIN LEAD;

LOGIC LEVEL COMPATIBLE

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0136 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

220

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

IPP14N03LA by Infineon Technologies

IPP14N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; Maximum Operating Temperature: 175 Cel; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0139 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPD13N03LAG by Infineon Technologies

IPD13N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; JESD-30 Code: R-PSSO-G2; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPF13N03LAG by Infineon Technologies

IPF13N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Peak Reflow Temperature (C): 260; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e3

3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPS13N03LAG by Infineon Technologies

IPS13N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; Package Style (Meter): IN-LINE; Terminal Position: SINGLE;

LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU13N03LAG by Infineon Technologies

IPU13N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 46 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

60 mJ

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0128 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPB14N03LAG by Infineon Technologies

IPB14N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 25 V;

LOGIC LEVEL COMPATIBLE

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

30 A

.0136 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

46 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STL9N65M2 by STMicroelectronics

STL9N65M2

STMicroelectronics

STL9N65M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 12A pulsed drain current, and operates in enhancement mode. Ideal for high-power circuits, it supports surface mount configurations.

95 mJ

SINGLE WITH BUILT-IN DIODE

650 V

4.5 A

4.5 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

S-XQCC-N12

1

12

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

N-CHANNEL

46 W

12 A

YES

NO LEAD

QUAD

SWITCHING

SILICON