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43 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4936NCT3G by Onsemi

NTMFS4936NCT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; No. of Terminals: 5; Maximum Drain Current (Abs) (ID): 79 A;

96.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

79 A

11.6 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

43 W

235 A

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NVD5867NLT4G by Onsemi

NVD5867NLT4G

Onsemi

NVD5867NLT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 85A IDM, and 0.05 ohm RDS(ON). Ideal for power applications due to its 43W Pdiss, 175°C max temp, and built-in diode. Suitable for surface mount designs with GULL WING terminals in a RECTANGULAR package.

18 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

22 A

6 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

43 W

85 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

NTMFS4936NT1G by Onsemi

NTMFS4936NT1G

Onsemi

NTMFS4936NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 235A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0055 ohm RDS(on), and 96.8mJ EAS rating. Operating in ENHANCEMENT MODE, this MOSFET has a max power dissipation of 43W and can handle up to 11.6A ID current.

96.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

79 A

11.6 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

43 W

235 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4937NT1G by Onsemi

NTMFS4937NT1G

Onsemi

NTMFS4937NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.007 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, 43W power dissipation, and operates in ENHANCEMENT MODE. Suitable for high-power electronics requiring efficient switching capabilities.

68.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

17.1 A

10.2 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

43 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4937NT3G by Onsemi

NTMFS4937NT3G

Onsemi

NTMFS4937NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 210A IDM, and 0.007 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.

68.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

17.1 A

10.2 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

43 W

210 A

Not Qualified

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

BSC119N03SG by Infineon Technologies

BSC119N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; JESD-30 Code: R-PDSO-F8; Maximum Pulsed Drain Current (IDM): 120 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

11.9 A

.0119 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

43 W

120 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC106N025SG by Infineon Technologies

BSC106N025SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; No. of Terminals: 8; Package Style (Meter): SMALL OUTLINE;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

30 A

13 A

.0106 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

43 W

120 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

IXTQ34N65X2M by Littelfuse

IXTQ34N65X2M

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 43 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSFM-T3;

AVALANCHE RATED

1000 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

34 A

.096 ohm

METAL-OXIDE SEMICONDUCTOR

1.7 pF

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

43 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON