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429 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PCFA86361F by Onsemi

PCFA86361F

Onsemi

PCFA86361F by Onsemi is a N-CHANNEL FET with 80V DS Breakdown Voltage, 429W Power Dissipation, and 371A Drain Current. Ideal for high-power applications in automotive electronics due to its AEC-Q101 standard compliance and robust design.

819 mJ

SINGLE WITH BUILT-IN DIODE

80 V

371 A

.0014 ohm

METAL-OXIDE SEMICONDUCTOR

139 pF

R-XUUC-N2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

429 W

AEC-Q101

YES

NO LEAD

UPPER

NOT SPECIFIED

SILICON

PCFA86561F by Onsemi

PCFA86561F

Onsemi

PCFA86561F by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 429W Power Dissipation, and 441A Drain Current. Ideal for high-power applications in automotive systems due to its AEC-Q101 standard compliance and robust design.

1167 mJ

SINGLE WITH BUILT-IN DIODE

60 V

441 A

.0011 ohm

METAL-OXIDE SEMICONDUCTOR

255 pF

R-XUUC-N2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

429 W

AEC-Q101

YES

NO LEAD

UPPER

NOT SPECIFIED

SILICON