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42 W Power Field Effect Transistors (FET) 17

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
VNP10N06-E by STMicroelectronics

VNP10N06-E

STMicroelectronics

VNP10N06-E by STMicroelectronics is a N-CHANNEL FET with 10A max drain current and 42W power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as motor control systems or power management circuits.

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

42 W

FET General Purpose Power

NO

IPD50R1K4CEBTMA1 by Infineon Technologies

IPD50R1K4CEBTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Minimum DS Breakdown Voltage: 500 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

49 mJ

SINGLE WITH BUILT-IN DIODE

500 V

3.1 A

4.8 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

42 W

8.8 A

FET General Purpose Powers

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPU50R1K4CEBKMA1 by Infineon Technologies

IPU50R1K4CEBKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 3.1 A;

49 mJ

SINGLE WITH BUILT-IN DIODE

500 V

3.1 A

4.8 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

42 W

8.8 A

FET General Purpose Powers

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

SPD09P06PL by Infineon Technologies

SPD09P06PL

Infineon Technologies

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

70 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

9.7 A

9.7 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

42 W

38.8 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

SPU09P06PL by Infineon Technologies

SPU09P06PL

Infineon Technologies

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

70 mJ

SINGLE WITH BUILT-IN DIODE

60 V

9.7 A

9.7 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

P-CHANNEL

42 W

38.8 A

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FDD4243_F085 by Fairchild Semiconductor

FDD4243_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDD4243_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 24A Drain Current, and 0.044 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 42W and wide operating temperature range (-55 to 175 °C).

ULTRA-LOW RESISTANCE

84 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

24 A

14 A

.044 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

42 W

Not Qualified

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

IRF6645TR1PBF by International Rectifier

IRF6645TR1PBF

International Rectifier

IRF6645TR1PBF by International Rectifier is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 45A IDM, and 0.035 ohm RDS(on). With a max power dissipation of 42W and operating temperature up to 150°C, it's ideal for high-power switching circuits.

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

5.7 A

5.7 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N3

e1

1

1

3

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

42 W

45 A

Not Qualified

FET General Purpose Powers

YES

TIN SILVER COPPER

NO LEAD

BOTTOM

30

SWITCHING

SILICON

IPD20N03L by Infineon Technologies

IPD20N03L

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Operating Temperature: 175 Cel; Minimum DS Breakdown Voltage: 30 V;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

15 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

255

N-CHANNEL

42 W

120 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

SPD30N03S2L-20 by Infineon Technologies

SPD30N03S2L-20

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Package Style (Meter): SMALL OUTLINE;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

70 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

42 W

120 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPU090N03LG by Infineon Technologies

IPU090N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 280 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

70 mJ

SINGLE WITH BUILT-IN DIODE

30 V

40 A

40 A

.0135 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

42 W

280 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP096N03LG by Infineon Technologies

IPP096N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Drain Current (ID): 35 A; Package Style (Meter): FLANGE MOUNT;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

40 mJ

SINGLE WITH BUILT-IN DIODE

30 V

35 A

35 A

.0141 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

42 W

245 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFS6B85NLT1G by Onsemi

NVMFS6B85NLT1G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Reference Standard: AEC-Q101; Package Shape: RECTANGULAR;

116 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

19 A

5.6 A

.072 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

42 W

93 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B85NLT3G by Onsemi

NVMFS6B85NLT3G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;

116 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

19 A

5.6 A

.072 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

42 W

93 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B85NLWFT1G by Onsemi

NVMFS6B85NLWFT1G

Onsemi

NVMFS6B85NLWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 93A IDM, and 0.072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.

116 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

19 A

5.6 A

.072 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

42 W

93 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

DMT3004LFG-13 by Diodes Incorporated

DMT3004LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

25 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

240 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

42 W

95 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMT3004LFG-7 by Diodes Incorporated

DMT3004LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

25 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

240 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

42 W

95 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

NVMFS6H858NT1G by Onsemi

NVMFS6H858NT1G

Onsemi

NVMFS6H858NT1G by Onsemi is a Power FET with 80V DS Breakdown Voltage, 137A IDM, and 0.0207 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current and low resistance capabilities.

151 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

29 A

29 A

.0207 ohm

METAL-OXIDE SEMICONDUCTOR

4.7 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

42 W

137 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON