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417 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPW90R120C3FKSA1 by Infineon Technologies

IPW90R120C3FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Terminal Finish: TIN; No. of Terminals: 3;

1940 mJ

SINGLE WITH BUILT-IN DIODE

900 V

36 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

417 W

96 A

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW45NM50FD by STMicroelectronics

STW45NM50FD

STMicroelectronics

STW45NM50FD by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 180A IDM and 800mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 417W and can handle up to 45A drain current.

800 mJ

SINGLE WITH BUILT-IN DIODE

500 V

45 A

45 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

417 W

180 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW45NM60 by STMicroelectronics

STW45NM60

STMicroelectronics

STW45NM60 by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has 180A IDM and 850mJ EAS, suitable for SWITCHING applications. The transistor operates in ENHANCEMENT MODE, with 0.11 ohm RDS(on) and can handle up to 417W power dissipation.

850 mJ

SINGLE WITH BUILT-IN DIODE

600 V

45 A

45 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

417 W

180 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IRF200S234 by Infineon Technologies

IRF200S234

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 417 W; Avalanche Energy Rating (EAS): 693 mJ; Transistor Application: SWITCHING;

693 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

90 A

90 A

.0169 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

417 W

312 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

AOK42S60L by Alpha & Omega Semiconductor

AOK42S60L

Alpha & Omega Semiconductor

AOK42S60L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 39A ID and 417W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for demanding environments requiring efficient power management.

SINGLE

39 A

39 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

417 W

FET General Purpose Power

NO

NOT SPECIFIED

FCHD040N65S3-F155 by Onsemi

FCHD040N65S3-F155

Onsemi

FCHD040N65S3-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 162.5A Pulsed Drain Current. Ideal for SWITCHING applications, it features a 0.04 ohm Drain-Source On Resistance, 417W Power Dissipation, and operates in the -55 to 150 °C temperature range.

358 mJ

SINGLE WITH BUILT-IN DIODE

650 V

65 A

65 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AD

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

417 W

162.5 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVHL040N65S3 by Onsemi

NVHL040N65S3

Onsemi

NVHL040N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a Max ID of 65A and 0.04 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with an EAS of 358mJ.

358 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

65 A

65 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

417 W

162.5 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON