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400 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BLL1214-250R,112 by NXP Semiconductors

BLL1214-250R,112

NXP Semiconductors

BLL1214-250R,112 by NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It boasts a max power dissipation of 400 W and operates effectively up to 150 °C. This MOSFET is perfect for efficient power management in various electronic devices.

SINGLE

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

400 W

FET General Purpose Power

STW25N95K3 by STMicroelectronics

STW25N95K3

STMicroelectronics

STW25N95K3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 950V breakdown voltage and 22A max drain current. It offers a built-in diode and operates in enhancement mode. With a robust design, it supports high power dissipation up to 400W.

450 mJ

SINGLE WITH BUILT-IN DIODE

950 V

22 A

22 A

.36 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

400 W

88 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON