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38.5 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AOTF7N65 by Alpha & Omega Semiconductor

AOTF7N65

Alpha & Omega Semiconductor

AOTF7N65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 24A IDM, 347mJ EAS, and 1.56ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and fast switching times (ton:97ns, toff:128ns).

347 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

7 A

7 A

1.56 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

38.5 W

24 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

128 ns

97 ns

NTD4965N-35G by Onsemi

NTD4965N-35G

Onsemi

NTD4965N-35G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 248A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. Ideal for high-power switching circuits requiring efficient performance in an IN-LINE package style.

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

68 A

13 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

38.5 W

248 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

NTTFS4821NTAG by Onsemi

NTTFS4821NTAG

Onsemi

NTTFS4821NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 171A Pulsed Drain Current, and 0.0108 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 38.5W, making it ideal for high-power switching circuits.

55 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

57 A

13.5 A

.0108 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

38.5 W

171 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NTTFS4821NTWG by Onsemi

NTTFS4821NTWG

Onsemi

NTTFS4821NTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 171A IDM, and 0.0108 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications in a SQUARE package with 5 terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 38.5W and can handle up to 150 °C temperature.

55 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

57 A

13.5 A

.0108 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

38.5 W

171 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON