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38 W Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4983NFT1G by Onsemi

NTMFS4983NFT1G

Onsemi

NTMFS4983NFT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.0031 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 150 °C max temp.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

106 A

22 A

.0031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

38 W

320 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTMFS4983NFT3G by Onsemi

NTMFS4983NFT3G

Onsemi

NTMFS4983NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 101mJ EAS, and 0.0031 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and DUAL terminal position.

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

106 A

22 A

.0031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

38 W

320 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

IRFR9024NTRL by International Rectifier

IRFR9024NTRL

International Rectifier

IRFR9024NTRL by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 62mJ EAS, operating in ENHANCEMENT MODE with 0.28 ohm RDS(on). The transistor has a max power dissipation of 38W and can withstand temperatures up to 150°C.

HIGH RELIABILITY

62 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

11 A

11 A

.28 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

38 W

44 A

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

IPB114N03LG by Infineon Technologies

IPB114N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0114 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

38 W

210 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

FQD11P06TF by Fairchild Semiconductor

FQD11P06TF

Fairchild Semiconductor

FQD11P06TF by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 37.6A Max IDM, 160mJ EAS, and 0.185 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 38W at 150°C.

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

9.4 A

9.4 A

.185 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

38 W

37.6 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

SPS03N60C3 by Infineon Technologies

SPS03N60C3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;

AVALANCHE RATED

100 mJ

SINGLE WITH BUILT-IN DIODE

600 V

3.2 A

3.2 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

38 W

9.6 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

IPU105N03LG by Infineon Technologies

IPU105N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Minimum DS Breakdown Voltage: 30 V; Terminal Form: THROUGH-HOLE;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

35 A

35 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

38 W

245 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP114N03LG by Infineon Technologies

IPP114N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

30 mJ

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0114 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

38 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMNH6069SFVW-13 by Diodes Incorporated

DMNH6069SFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;

7.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

5 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

38 W

72 A

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMNH6069SFVW-7 by Diodes Incorporated

DMNH6069SFVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 175 Cel; Maximum Feedback Capacitance (Crss): 28 pF;

7.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

5 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

38 W

72 A

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMNH6069SFVWQ-7 by Diodes Incorporated

DMNH6069SFVWQ-7

Diodes Incorporated

DMNH6069SFVWQ-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 72A pulsed drain current, and 0.05 ohm max drain-source resistance. Ideal for switching applications in automotive electronics due to its AEC-Q101 compliance and 175°C operating temp.

7.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

5 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

38 W

72 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMNH6069SFVWQ-13 by Diodes Incorporated

DMNH6069SFVWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Pulsed Drain Current (IDM): 72 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

7.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

5 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

38 W

72 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH10H032SPSW-13 by Diodes Incorporated

DMTH10H032SPSW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 175 Cel; Maximum Drain-Source On Resistance: .032 ohm;

25.3 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

25 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

6 pF

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

38 W

100 A

MIL-STD-202

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

SWITCHING

SILICON