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37.5 W Power Field Effect Transistors (FET) 9

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FDP4020P by Fairchild Semiconductor

FDP4020P

Fairchild Semiconductor

FDP4020P by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 16A Drain Current, and 0.08 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 37.5W. The transistor operates at up to 175°C and has a package style of FLANGE MOUNT.

SINGLE WITH BUILT-IN DIODE

20 V

16 A

16 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

P-CHANNEL

37.5 W

48 A

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD4906N-1G by Onsemi

NTD4906N-1G

Onsemi

NTD4906N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 223A IDM, and 0.008 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 37.5W at 175 °C, making it ideal for high-power switching circuits.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

14 A

14 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

37.5 W

223 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD4906N-35G by Onsemi

NTD4906N-35G

Onsemi

NTD4906N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 223A IDM, and 0.008 ohm RDS. Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with built-in DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 37.5W at 175 °C max temp.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

14 A

14 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

37.5 W

223 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

NTD4906NT4G by Onsemi

NTD4906NT4G

Onsemi

NTD4906NT4G by Onsemi is an N-channel Power FET with a 30V DS breakdown voltage and 223A pulsed drain current, ideal for switching applications. It features a built-in diode, 0.008 ohm max on-resistance, and operates in enhancement mode. The small outline package with gull wing terminals ensures efficient heat dissipation up to 175 °C.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

14 A

14 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

37.5 W

223 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

DMTH47M2LFVW-13 by Diodes Incorporated

DMTH47M2LFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Terminal Form: FLAT; Maximum Drain Current (ID): 49 A;

28.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

49 A

.0089 ohm

METAL-OXIDE SEMICONDUCTOR

19.5 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

37.5 W

196 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH47M2LFVWQ-7 by Diodes Incorporated

DMTH47M2LFVWQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;

HIGH RELIABILITY

28.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

49 A

.0089 ohm

METAL-OXIDE SEMICONDUCTOR

19.5 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

37.5 W

196 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH47M2LFVW-7 by Diodes Incorporated

DMTH47M2LFVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Transistor Element Material: SILICON; Reference Standard: MIL-STD-202;

28.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

49 A

.0089 ohm

METAL-OXIDE SEMICONDUCTOR

19.5 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

37.5 W

196 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH6010LPDWQ-13 by Diodes Incorporated

DMTH6010LPDWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Transistor Application: SWITCHING; No. of Elements: 2;

20 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

47.6 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

58 pF

R-PDSO-F8

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

37.5 W

90 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

FLAT

DUAL

SWITCHING

SILICON

DMTH6010LPDW-13 by Diodes Incorporated

DMTH6010LPDW-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 60 V;

20 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

47.6 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

58 pF

R-PDSO-F8

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

37.5 W

90 A

MIL-STD-202

YES

FLAT

DUAL

SWITCHING

SILICON