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35.7 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD4963N-35G by Onsemi

NTD4963N-35G

Onsemi

NTD4963N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 132A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is IN-LINE with SILICON transistor element material.

33.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

44 A

8.1 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

35.7 W

132 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

NTD4963NT4G by Onsemi

NTD4963NT4G

Onsemi

NTD4963NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 132A Pulsed Drain Current, and 0.016 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.

33.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

44 A

8.1 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

35.7 W

132 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

DMT3009LFVWQ-13 by Diodes Incorporated

DMT3009LFVWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .011 ohm;

HIGH RELIABILITY

19 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

52 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

35.7 W

90 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

FCPF400N80ZL1-F154 by Onsemi

FCPF400N80ZL1-F154

Onsemi

FCPF400N80ZL1-F154 by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It has a max IDM of 33A and EAS of 339mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.4 ohm RDS(on), -55 to 150 °C temperature range, and fast ton of 84ns/toff of 127ns.

339 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

800 V

11 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

.5 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

35.7 W

33 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

127 ns

84 ns

DMT3009LFVW-13 by Diodes Incorporated

DMT3009LFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Reference Standard: MIL-STD-202;

19 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

52 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

35.7 W

90 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT4008LFV-13 by Diodes Incorporated

DMT4008LFV-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; Maximum Pulsed Drain Current (IDM): 70 A; No. of Elements: 1;

19.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

54.8 A

.0079 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

35.7 W

70 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT4008LFV-7 by Diodes Incorporated

DMT4008LFV-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; No. of Terminals: 8; JESD-30 Code: S-PDSO-F8;

19.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

54.8 A

.0079 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

35.7 W

70 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON