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349 W Power Field Effect Transistors (FET) 12

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK956R1-100E,127 by NXP Semiconductors

BUK956R1-100E,127

NXP Semiconductors

BUK956R1-100E,127 by NXP is a single N-channel power FET designed for high-performance applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Ideal for efficient power management in various electronic devices.

SINGLE

120 A

120 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

349 W

FET General Purpose Power

NO

TIN

BUK9E1R8-40E,127 by NXP Semiconductors

BUK9E1R8-40E,127

NXP Semiconductors

BUK9E1R8-40E,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.

SINGLE

120 A

120 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

349 W

FET General Purpose Power

NO

BUK952R8-60E,127 by NXP Semiconductors

BUK952R8-60E,127

NXP Semiconductors

BUK952R8-60E,127 from NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Ideal for demanding power management tasks in various electronic devices.

SINGLE

120 A

120 A

METAL-OXIDE SEMICONDUCTOR

e3

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

349 W

FET General Purpose Power

NO

TIN

BUK9E4R4-80E,127 by NXP Semiconductors

BUK9E4R4-80E,127

NXP Semiconductors

NXP Semiconductors BUK9E4R4-80E,127 is a N-channel Power FET with 80V DS breakdown voltage and 715A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0044 ohm max on-resistance, and operates in enhancement mode.

AVALANCHE RATED

488 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

120 A

120 A

.0044 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

349 W

715 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK954R4-80E,127 by NXP Semiconductors

BUK954R4-80E,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Drain Current (ID): 120 A; Additional Features: AVALANCHE RATED;

AVALANCHE RATED

488 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

120 A

120 A

.0044 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

349 W

715 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK951R9-40E,127 by NXP Semiconductors

BUK951R9-40E,127

NXP Semiconductors

BUK951R9-40E,127 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with robust performance.

AVALANCHE RATED

1008 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.00184 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

349 W

1257 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK951R6-30E,127 by NXP Semiconductors

BUK951R6-30E,127

NXP Semiconductors

BUK951R6-30E,127 from NXP is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in automotive systems.

AVALANCHE RATED

1405 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

120 A

120 A

.0016 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

349 W

1400 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK9E6R1-100E,127 by NXP Semiconductors

BUK9E6R1-100E,127

NXP Semiconductors

BUK9E6R1-100E,127 from NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.

AVALANCHE RATED

387 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

120 A

120 A

.0061 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

349 W

576 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK9E1R9-40E,127 by NXP Semiconductors

BUK9E1R9-40E,127

NXP Semiconductors

BUK9E1R9-40E,127 from NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with built-in diode functionality.

AVALANCHE RATED

1008 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.00193 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

349 W

1228 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK7E4R0-80E,127 by NXP Semiconductors

BUK7E4R0-80E,127

NXP Semiconductors

NXP Semiconductors' BUK7E4R0-80E,127 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 758A IDM and 349W Pd max. The transistor operates in ENHANCEMENT MODE with 0.004 ohm RDS(on) and can handle up to 175°C temperature.

AVALANCHE RATED

488 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

120 A

120 A

.004 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

349 W

758 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK761R5-40EJ by NXP Semiconductors

BUK761R5-40EJ

NXP Semiconductors

BUK761R5-40EJ by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with minimal resistance.

AVALANCHE RATED

1008 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.00151 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

349 W

1400 A

AEC-Q101; IEC-60134

FET General Purpose Power

YES

GULL WING

SINGLE

SWITCHING

SILICON

BUK7E1R6-30E,127 by NXP Semiconductors

BUK7E1R6-30E,127

NXP Semiconductors

NXP Semiconductors BUK7E1R6-30E,127 is a N-channel Power FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1408A pulsed drain current, and 349W power dissipation in a plastic/epoxy package.

AVALANCHE RATED

1405 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

120 A

120 A

.0016 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

349 W

1408 A

AEC-Q101; IEC-60134

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON