Loading...

348 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP180N055TUJ-E1-AY by Renesas Electronics

NP180N055TUJ-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 348 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

180 A

180 A

.0023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G6

1

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

348 W

720 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTC040N120SC1 by Onsemi

NTC040N120SC1

Onsemi

NTC040N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, 240A IDM, and 0.056 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with SILICON CARBIDE material. With a max power dissipation of 348W and operating temperature range from -55 to 175 °C, it offers reliable performance.

613 mJ

SINGLE WITH BUILT-IN DIODE

1200 V

60 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUUC-N4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

348 W

240 A

YES

NO LEAD

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

NP180N04TUK-E1-AY by Renesas Electronics

NP180N04TUK-E1-AY

Renesas Electronics

NP180N04TUK-E1-AY by Renesas Electronics is a N-CHANNEL FET with 180A ID and 348W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this MOSFET offers robust performance in demanding environments.

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

348 W

FET General Purpose Power

YES

NOT SPECIFIED