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320 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW75NF30 by STMicroelectronics

STW75NF30

STMicroelectronics

STW75NF30 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, breakdown voltage of 300 V, and power dissipation up to 320 W. Ideal for high-efficiency power management in various electronic devices.

SINGLE WITH BUILT-IN DIODE

300 V

60 A

60 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AD

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

320 W

240 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STHU32N65DM6AG by STMicroelectronics

STHU32N65DM6AG

STMicroelectronics

STHU32N65DM6AG by STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 650V breakdown voltage, 120A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for high-power circuits, it ensures efficient performance in compact designs.

778 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

37 A

.097 ohm

METAL-OXIDE SEMICONDUCTOR

.3 pF

R-PSSO-G7

e4

1

1

7

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

320 W

120 A

AEC-Q101

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

SINGLE

SWITCHING

SILICON