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32.5 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4823NT1G by Onsemi

NTMFS4823NT1G

Onsemi

NTMFS4823NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 85A IDM and 0.018 ohm RDS(ON), suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power management in various electronic devices.

28.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

6.9 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

85 pF

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

32.5 W

85 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4823NT3G by Onsemi

NTMFS4823NT3G

Onsemi

NTMFS4823NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 85A IDM, 28.8mJ EAS, and 0.018 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 32.5W in a SMALL OUTLINE package.

28.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

30 A

6.9 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

85 pF

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

32.5 W

85 A

Not Qualified

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON