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3.5 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PMPB40SNA,115 by NXP Semiconductors

PMPB40SNA,115

NXP Semiconductors

PMPB40SNA,115 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 12.9 A and operates at temperatures up to 150 °C, making it ideal for high-performance applications. Its surface mount configuration ensures easy integration into compact designs.

SINGLE

12.9 A

12.9 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

3.5 W

FET General Purpose Power

YES

TIN

30

SI7960DP-T1-E3 by Vishay Intertechnology

SI7960DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7960DP-T1-E3 is an N-CHANNEL FET with 60V DS Breakdown Voltage, 40A IDM, and 0.021 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and DC-DC converters.

27 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

6.2 A

6.2 A

.021 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.5 W

40 A

Not Qualified

FET General Purpose Powers

YES

Matte Tin (Sn)

C BEND

DUAL

40

SILICON

SI7540DP-T1-E3 by Vishay Intertechnology

SI7540DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7540DP-T1-E3 is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 7.6A and 0.017 ohm on-resistance, it operates in enhancement mode up to 150°C, making it suitable for various power management tasks.

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

5.7 A

7.6 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

3.5 W

20 A

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

C BEND

DUAL

30

SWITCHING

SILICON

DMTH8028LFVW-13 by Diodes Incorporated

DMTH8028LFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Package Shape: SQUARE; Transistor Application: SWITCHING;

23.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

27 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

19.5 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

3.5 W

108 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH8028LFVW-7 by Diodes Incorporated

DMTH8028LFVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Package Shape: SQUARE; Maximum Operating Temperature: 175 Cel;

23.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

27 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

19.5 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

3.5 W

108 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON