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3.1 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IRFH7921TR2PBF by International Rectifier

IRFH7921TR2PBF

International Rectifier

IRFH7921TR2PBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.1W. This surface mount transistor has a package style of SMALL OUTLINE and can handle temperatures from -55 to 150°C.

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

34 A

15 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

R-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

3.1 W

120 A

YES

FLAT

DUAL

SWITCHING

SILICON

CSD16321Q5C by Texas Instruments

CSD16321Q5C

Texas Instruments

CSD16321Q5C by Texas Instruments is a N-CHANNEL Power FET with 25V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 200A IDM, 218mJ EAS, and 0.0038 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a compact SMALL OUTLINE package with DUAL terminals.

AVALANCHE RATED

218 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

100 A

100 A

.0038 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.1 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

CSD16325Q5C by Texas Instruments

CSD16325Q5C

Texas Instruments

CSD16325Q5C by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 500mJ EAS, and 0.0029 ohm Drain-Source On Resistance. This SINGLE transistor in PLASTIC/EPOXY package operates from -55 to 150 °C and has a max power dissipation of 3.1W.

AVALANCHE RATED

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

100 A

33 A

.0029 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.1 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

CSD16322Q5C by Texas Instruments

CSD16322Q5C

Texas Instruments

CSD16322Q5C by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 136A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE.

AVALANCHE RATED

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

97 A

97 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

3.1 W

136 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON