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28.4 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPD60R1K4C6 by Infineon Technologies

IPD60R1K4C6

Infineon Technologies

IPD60R1K4C6 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, suitable for switching applications. It features a single configuration with built-in diode, 8A max pulsed drain current, and 1.4 ohm max RDS(on). This MOSFET operates in enhancement mode at up to 150°C, making it ideal for high-power applications.

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

3.2 A

3.2 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28.4 W

8 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD65R1K4CFDBTMA1 by Infineon Technologies

IPD65R1K4CFDBTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28.4 W; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

2.8 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

28.4 W

8.2 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

IPD65R1K4CFDATMA1 by Infineon Technologies

IPD65R1K4CFDATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28.4 W; Maximum Drain Current (ID): 2.8 A; Maximum Drain-Source On Resistance: 1.4 ohm;

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

2.8 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

28.4 W

8.2 A

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPD65R1K4CFDATMA2 by Infineon Technologies

IPD65R1K4CFDATMA2

Infineon Technologies

IPD65R1K4CFDATMA2 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 8.2A IDM and 26mJ EAS, operating in ENHANCEMENT MODE at -55 to 150°C. The PLASTIC/EPOXY package has GULL WING terminals and a DRAIN connection, suitable for surface mount designs with 1.4Ω RDS(on).

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

2.8 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

28.4 W

8.2 A

YES

Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON