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26 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN012-25YLC,115 by NXP Semiconductors

PSMN012-25YLC,115

NXP Semiconductors

PSMN012-25YLC,115 by NXP Semiconductors is an N-channel power FET designed for high-efficiency applications. It supports a max drain current of 33 A and operates at temperatures up to 175 °C, making it ideal for demanding power management tasks. Its surface mount configuration ensures easy integration into compact designs.

SINGLE

33 A

33 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

260

N-CHANNEL

26 W

FET General Purpose Power

YES

TIN

30

NDDL01N60Z-1G by Onsemi

NDDL01N60Z-1G

Onsemi

NDDL01N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 3.4A IDM, and 15 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in power supplies, motor control, and lighting systems due to its N-channel configuration and 26W Pdiss.

12 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

.8 A

.8 A

15 ohm

METAL-OXIDE SEMICONDUCTOR

3 pF

R-PSIP-T3

e3

3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

26 W

3.4 A

NO

TIN

THROUGH-HOLE

SINGLE

30

SILICON