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254 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVB5404NT4G by Onsemi

NVB5404NT4G

Onsemi

NVB5404NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 670A IDM, 1000mJ EAS, and 0.0045 ohm RDS(on). Package: PLASTIC/EPOXY, GULL WING terminals, and operates up to 175°C. AEC-Q101 compliant for automotive use.

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

167 A

24 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

254 W

670 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

FDB8860_F085 by Fairchild Semiconductor

FDB8860_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDB8860_F085 is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 31A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0027 ohm On Resistance, and operates in ENHANCEMENT MODE.

947 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

31 A

31 A

.0027 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

254 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTP5404NRG by Onsemi

NTP5404NRG

Onsemi

NTP5404NRG by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 40V, max pulsed drain current of 258A, and max power dissipation of 254W. Ideal for enhancement mode operation in high-power systems with its low on-resistance of 0.0045 ohm.

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

167 A

136 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

254 W

258 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK764R3-40B,118 by NXP Semiconductors

BUK764R3-40B,118

NXP Semiconductors

NXP Semiconductors BUK764R3-40B,118 is a N-channel FET with 40V DS breakdown voltage and 706A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0043 ohm max on-resistance, and 961mJ avalanche energy rating.

961 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

75 A

176 A

.0043 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

254 W

706 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

BUK954R4-40B,127 by NXP Semiconductors

BUK954R4-40B,127

NXP Semiconductors

NXP Semiconductors' BUK954R4-40B,127 is a N-channel Power FET with 40V DS breakdown voltage and 697A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0044 ohm max on-resistance, and 961mJ avalanche energy rating.

961 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

75 A

75 A

.0044 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

254 W

697 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK9E4R4-40B,127 by NXP Semiconductors

BUK9E4R4-40B,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 254 W; Maximum Drain-Source On Resistance: .0044 ohm; Operating Mode: ENHANCEMENT MODE;

961 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

75 A

75 A

.0044 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

254 W

697 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON