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244 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMTS0D4N04CLTXG by Onsemi

NVMTS0D4N04CLTXG

Onsemi

NVMTS0D4N04CLTXG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for power applications. Featuring 900A IDM and 4454mJ EAS, it operates in Enhancement Mode with 0.00064 ohm RDS(ON). With AEC-Q101 standard compliance, this MOSFET is suitable for automotive and industrial electronics.

4454 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

553.8 A

553.8 A

.00064 ohm

METAL-OXIDE SEMICONDUCTOR

390 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

244 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMTS001N06CLTXG by Onsemi

NTMTS001N06CLTXG

Onsemi

NTMTS001N06CLTXG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 900A IDM. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment. Features include a built-in diode, small outline package style, and -55 to 175 °C operating temperature range.

887 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

398.2 A

398.2 A

.00105 ohm

METAL-OXIDE SEMICONDUCTOR

130 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

244 W

900 A

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NTMTS0D4N04CLTXG by Onsemi

NTMTS0D4N04CLTXG

Onsemi

NTMTS0D4N04CLTXG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 900A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment. Features include a built-in diode, small outline package style, and an operating temperature range of -55 to 175 °C.

4454 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

553.8 A

553.8 A

.00064 ohm

METAL-OXIDE SEMICONDUCTOR

390 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

244 W

900 A

YES

MATTE TIN

FLAT

DUAL

30

SILICON