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240 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW26NM60 by STMicroelectronics

STW26NM60

STMicroelectronics

STW26NM60 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 120A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

740 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

26 A

30 A

.135 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

240 W

120 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FQA10N80C_F109 by Fairchild Semiconductor

FQA10N80C_F109

Fairchild Semiconductor

Fairchild Semiconductor's FQA10N80C_F109 is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 40A IDM and 920mJ EAS. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 240W at 150°C.

920 mJ

SINGLE WITH BUILT-IN DIODE

800 V

10 A

10 A

1.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

240 W

40 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMNH45M7SCT by Diodes Incorporated

DMNH45M7SCT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 240 W; Terminal Form: THROUGH-HOLE; Minimum Operating Temperature: -55 Cel;

92 mJ

SINGLE WITH BUILT-IN DIODE

40 V

220 A

220 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

272 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

240 W

200 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTP110N65S3HF by Onsemi

NTP110N65S3HF

Onsemi

NTP110N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 69A and EAS of 380mJ, operating in Enhancement Mode. With a package style of Flange Mount and RDS(on) of 0.11 ohm, it offers high power dissipation up to 240W at temperatures ranging from -55°C to 150°C.

380 mJ

SINGLE WITH BUILT-IN DIODE

650 V

30 A

30 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

240 W

69 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTPF110N65S3HF by Onsemi

NTPF110N65S3HF

Onsemi

NTPF110N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 69A and EAS of 380mJ, operating in enhancement mode. With a package style of Flange Mount and an RDS(on) of 0.11 ohm, it offers efficient performance in various power electronics designs.

380 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

30 A

30 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

240 W

69 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NVH4L110N65S3F by Onsemi

NVH4L110N65S3F

Onsemi

NVH4L110N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 69A IDM. Ideal for applications requiring high power dissipation up to 240W, such as automotive systems due to AEC-Q101 standard compliance.

380 mJ

SINGLE WITH BUILT-IN DIODE

650 V

30 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

7.5 pF

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

240 W

69 A

AEC-Q101

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

SCTWA35N65G2V-4 by STMicroelectronics

SCTWA35N65G2V-4

STMicroelectronics

SCTWA35N65G2V-4 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 0.067 ohm RDS(on), and 240W Pdiss, operating in ENHANCEMENT MODE at -55 to 200°C. The transistor has a RECTANGULAR package with THROUGH-HOLE terminals and METAL-OXIDE SEMICONDUCTOR technology.

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

45 A

.067 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-PSFM-T4

1

4

ENHANCEMENT MODE

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

240 W

90 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

NVHL110N65S3HF by Onsemi

NVHL110N65S3HF

Onsemi

NVHL110N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 69A and EAS of 380mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.11 ohm RDS(on) and can handle up to 240W power dissipation.

380 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

30 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

240 W

69 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON