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230 W Power Field Effect Transistors (FET) 12

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
TK31N60W,S1VF by Toshiba

TK31N60W,S1VF

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 30.8 A;

SINGLE

30.8 A

30.8 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

230 W

FET General Purpose Power

NO

BUK9506-55A,127 by NXP Semiconductors

BUK9506-55A,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 616 A;

LOGIC LEVEL COMPATIBLE

1100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

75 A

75 A

.0067 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

616 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK9515-100A,127 by NXP Semiconductors

BUK9515-100A,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Minimum DS Breakdown Voltage: 100 V; Terminal Finish: TIN;

LOGIC LEVEL COMPATIBLE

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

75 A

75 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

313 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHP110NQ08LT,127 by NXP Semiconductors

PHP110NQ08LT,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

560 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

75 V

75 A

75 A

.00995 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

240 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHP110NQ08T,127 by NXP Semiconductors

PHP110NQ08T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Case Connection: DRAIN; JEDEC-95 Code: TO-220AB;

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

560 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

75 V

75 A

75 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

440 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHP45NQ15T,127 by NXP Semiconductors

PHP45NQ15T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB;

180 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

45.1 A

45.1 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

90.2 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PSMN004-60P,127 by NXP Semiconductors

PSMN004-60P,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;

LOGIC LEVEL COMPATIBLE

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

75 A

75 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

230 W

400 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

PSMN005-55P,127 by NXP Semiconductors

PSMN005-55P,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;

LOGIC LEVEL COMPATIBLE

268 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

75 A

75 A

.0067 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

240 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW13NK80Z by STMicroelectronics

STW13NK80Z

STMicroelectronics

STW13NK80Z by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 12 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 230 W. This versatile transistor is suitable for high-voltage circuits.

450 mJ

SINGLE WITH BUILT-IN DIODE

800 V

12 A

12 A

.65 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

48 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW18NK60Z by STMicroelectronics

STW18NK60Z

STMicroelectronics

STW18NK60Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 16A max drain current, and 230W power dissipation. Ideal for high-efficiency power management in various electronic devices.

400 mJ

SINGLE WITH BUILT-IN DIODE

600 V

16 A

16 A

.36 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

64 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW12NK95Z by STMicroelectronics

STW12NK95Z

STMicroelectronics

STW12NK95Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 950V breakdown voltage, 40A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

500 mJ

SINGLE WITH BUILT-IN DIODE

950 V

10 A

10 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

40 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TK31N60W5,S1VF by Toshiba

TK31N60W5,S1VF

Toshiba

Toshiba's TK31N60W5,S1VF is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 123A IDM, 437mJ EAS, and 0.099ohm RDS(ON). Operating in ENHANCEMENT MODE at up to 150°C, it has a max power dissipation of 230W.

437 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

30.8 A

30.8 A

.099 ohm

METAL-OXIDE SEMICONDUCTOR

9.5 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

123 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON