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23 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFD5877NLT1G by Onsemi

NVMFD5877NLT1G

Onsemi

NVMFD5877NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS. It's used for SWITCHING applications due to its 2 ELEMENTS WITH BUILT-IN DIODE configuration. Operating at 175°C max temp, it's ideal for high-power requirements in various electronic devices.

10.5 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

17 A

6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

23 W

74 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NVMFD5877NLT3G by Onsemi

NVMFD5877NLT3G

Onsemi

NVMFD5877NLT3G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 74A Max Pulsed Drain Current, 10.5mJ Avalanche Energy Rating, and 0.06ohm Max Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power switching circuits.

10.5 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

17 A

6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

23 W

74 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NVMFD5877NLWFT1G by Onsemi

NVMFD5877NLWFT1G

Onsemi

NVMFD5877NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

40 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

17 A

6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

23 W

74 A

AEC-Q101

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SILICON

NVMFD5877NLWFT3G by Onsemi

NVMFD5877NLWFT3G

Onsemi

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JESD-609 Code: e3; Package Shape: RECTANGULAR;

40 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

17 A

6 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

23 W

74 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SILICON

SI7228DN-T1-GE3 by Vishay Intertechnology

SI7228DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7228DN-T1-GE3 is an N-channel FET with 2 elements and built-in diode for switching applications. Features include max pulsed drain current of 35A, avalanche energy rating of 9.8mJ, and max power dissipation of 23W. Ideal for high-power switching circuits requiring a small outline package design.

9.8 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

26 A

8.8 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

S-XDSO-C6

1

2

6

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

SQUARE

SMALL OUTLINE

260

N-CHANNEL

23 W

35 A

Not Qualified

FET General Purpose Powers

YES

Pure Matte Tin (Sn) - annealed

C BEND

DUAL

30

SWITCHING

SILICON

PHX20N06T,127 by NXP Semiconductors

PHX20N06T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Pulsed Drain Current (IDM): 51.6 A; Maximum Drain-Source On Resistance: .075 ohm;

30.3 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

55 V

12.9 A

12.9 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

23 W

51.6 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFD5C478NLWFT1G by Onsemi

NVMFD5C478NLWFT1G

Onsemi

NVMFD5C478NLWFT1G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage and 98A Pulsed Drain Current. Ideal for automotive applications due to AEC-Q101 standard compliance, it features a compact rectangular package and low on-resistance of 0.025 ohm.

48 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

29 A

10.5 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

23 W

98 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON