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2.3 W Power Field Effect Transistors (FET) 11

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
UPA2670T1R-E2-AX by Renesas Electronics

UPA2670T1R-E2-AX

Renesas Electronics

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-609 Code: e4; Maximum Drain Current (Abs) (ID): 3 A; Terminal Finish: NICKEL PALLADIUM GOLD;

3 A

3 A

METAL-OXIDE SEMICONDUCTOR

e4

150 Cel

P-CHANNEL

2.3 W

Other Transistors

YES

NICKEL PALLADIUM GOLD

UPA2660T1R-E2-AX by Renesas Electronics

UPA2660T1R-E2-AX

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: NICKEL PALLADIUM GOLD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

20 V

4 A

4 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

e4

150 Cel

260

N-CHANNEL

2.3 W

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

UPA2690T1R-E2-AX by Renesas Electronics

UPA2690T1R-E2-AX

Renesas Electronics

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (ID): 4 A; JESD-609 Code: e4;

SINGLE

20 V

4 A

4 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

e4

1

150 Cel

260

N-CHANNEL AND P-CHANNEL

2.3 W

Other Transistors

YES

NICKEL PALLADIUM GOLD

NTLJD4150PTBG by Onsemi

NTLJD4150PTBG

Onsemi

NTLJD4150PTBG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features a max IDM of 14A and ID of 3.4A, with an RDS(on) of 0.135 ohm. This MOSFET operates in ENHANCEMENT MODE, has a max power dissipation of 2.3W, and can withstand temperatures from -55 to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

3.4 A

2.7 A

.135 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.3 W

14 A

Not Qualified

Other Transistors

YES

TIN

NO LEAD

DUAL

SWITCHING

SILICON

NTLJD3119CTAG by Onsemi

NTLJD3119CTAG

Onsemi

NTLJD3119CTAG by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It features 20V DS Breakdown Voltage, 18A Max IDM, and 0.065 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.8 A

2.6 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

2.3 W

18 A

Not Qualified

Other Transistors

YES

TIN

NO LEAD

DUAL

SILICON

DMT2004UFV-13 by Diodes Incorporated

DMT2004UFV-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 24 V;

36 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

70 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

559 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.3 W

90 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH6016LFDFWQ-13 by Diodes Incorporated

DMTH6016LFDFWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

11.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

9.4 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

25.4 pF

S-PDSO-N6

e3

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.3 W

70 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMP26M7UFG-13 by Diodes Incorporated

DMP26M7UFG-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-30 Code: S-PDSO-F5; Minimum Operating Temperature: -55 Cel;

28 mJ

SINGLE WITH BUILT-IN DIODE

20 V

18 A

18 A

.0067 ohm

METAL-OXIDE SEMICONDUCTOR

728 pF

S-PDSO-F5

e3

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.3 W

80 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT2004UFG-13 by Diodes Incorporated

DMT2004UFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Shape: SQUARE; JESD-609 Code: e3;

36 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

70 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

559 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.3 W

90 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMTH6016LFDFWQ-7 by Diodes Incorporated

DMTH6016LFDFWQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;

11.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

9.4 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

25.4 pF

S-PDSO-N6

e3

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.3 W

70 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMTH6016LFDFW-13 by Diodes Incorporated

DMTH6016LFDFW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -55 Cel;

HIGH RELIABILITY

11.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

9.4 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

25.4 pF

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.3 W

70 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON