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19 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SFT1443-TL-W by Onsemi

SFT1443-TL-W

Onsemi

The Onsemi SFT1443-TL-W is a N-CHANNEL FET with 9A max drain current and 19W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.

SINGLE

9 A

9 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

19 W

FET General Purpose Power

YES

TIN BISMUTH

30

SIA444DJT-T1-GE3 by Vishay Intertechnology

SIA444DJT-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIA444DJT-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 12A max Drain Current and 0.017 ohm max On Resistance. This MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

12 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

19 W

40 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

BUK6D38-30EX by Nexperia

BUK6D38-30EX

Nexperia

Nexperia's BUK6D38-30EX is a N-channel FET with 30V DS breakdown voltage, 68A IDM, and 0.038 ohm RDS(on). Ideal for switching applications in automotive electronics, it operates from -55 to 175 °C with a max power dissipation of 19W.

10 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

17 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

19 W

68 A

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON