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171 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPP65R065C7XKSA1 by Infineon Technologies

IPP65R065C7XKSA1

Infineon Technologies

IPP65R065C7XKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 145A max pulsed drain current and 0.065 ohm max drain-source on resistance. Operating in enhancement mode, it has a package style of flange mount and can handle up to 171W power dissipation.

171 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

33 A

33 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

171 W

145 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPZ65R065C7XKSA1 by Infineon Technologies

IPZ65R065C7XKSA1

Infineon Technologies

IPZ65R065C7XKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 145A max pulsed drain current and 0.065 ohm max drain-source resistance. This MOSFET operates in enhancement mode, with a temperature range of -55 to 150 °C.

171 mJ

SINGLE WITH BUILT-IN DIODE

650 V

33 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

171 W

145 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTHL125N65S3H by Onsemi

NTHL125N65S3H

Onsemi

NTHL125N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 67A IDM, and 0.125 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 171W and can handle up to 24A ID.

216 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

24 A

.125 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

171 W

67 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON