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165 W Power Field Effect Transistors (FET) 12

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IPB80N06S3L-05 by Infineon Technologies

IPB80N06S3L-05

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; JEDEC-95 Code: TO-263AB; Peak Reflow Temperature (C): 245;

LOGIC LEVEL COMPATIBLE

345 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0077 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

165 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPI80N06S3-05 by Infineon Technologies

IPI80N06S3-05

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Minimum DS Breakdown Voltage: 55 V; No. of Elements: 1;

345 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0054 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

165 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

IPP80N06S3-05 by Infineon Technologies

IPP80N06S3-05

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Minimum DS Breakdown Voltage: 55 V; Terminal Position: SINGLE;

345 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0054 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

165 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

IPP80N06S3L-05 by Infineon Technologies

IPP80N06S3L-05

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 345 mJ;

LOGIC LEVEL COMPATIBLE

345 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

165 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MTP52N06VLG by Onsemi

MTP52N06VLG

Onsemi

MTP52N06VLG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 182A and EAS of 406mJ, making it suitable for high-power tasks. With a Drain Current of 52A and 0.025 ohm RDS(on), this transistor operates in ENHANCEMENT MODE efficiently up to 175 °C.

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

406 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

52 A

52 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

165 W

182 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SCT2160KEC by ROHM

SCT2160KEC

ROHM

ROHM's SCT2160KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for SWITCHING applications. It features 55A IDM, 0.208 ohm RDS(on), and 165W power dissipation. The transistor operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power circuits.

SINGLE WITH BUILT-IN DIODE

1200 V

22 A

.208 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

165 W

55 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

NVMFS6B05NLT1G by Onsemi

NVMFS6B05NLT1G

Onsemi

NVMFS6B05NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 100V DS breakdown voltage, and 330A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 165W max power dissipation and AEC-Q101 reference standard compliance.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

114 A

114 A

.0082 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

165 W

330 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B05NLT3G by Onsemi

NVMFS6B05NLT3G

Onsemi

NVMFS6B05NLT3G by Onsemi is a Power FET with N-CHANNEL polarity, 100V DS breakdown voltage, and 330A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 165W max power dissipation and AEC-Q101 reference standard compliance.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

114 A

114 A

.0082 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

165 W

330 A

AEC-Q101

YES

TIN

FLAT

DUAL

30

SILICON

NVMFS6B05NLWFT1G by Onsemi

NVMFS6B05NLWFT1G

Onsemi

NVMFS6B05NLWFT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 330A IDM, and 0.0082 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

114 A

114 A

.0082 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

165 W

330 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B05NLWFT3G by Onsemi

NVMFS6B05NLWFT3G

Onsemi

NVMFS6B05NLWFT3G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 330A IDM, and 0.0082 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to its AEC-Q101 reference standard compliance.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

114 A

114 A

.0082 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

165 W

330 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS6B05NT1G by Onsemi

NVMFS6B05NT1G

Onsemi

NVMFS6B05NT1G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 330A IDM, and 0.008 ohm RDS(ON). It's used in power applications due to its 165W Pdiss, -55 to 175 °C Temp Range, and AEC-Q101 compliance.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

114 A

17 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

165 W

330 A

AEC-Q101

YES

TIN

FLAT

DUAL

30

SILICON

NVMFS6B05NWFT1G by Onsemi

NVMFS6B05NWFT1G

Onsemi

NVMFS6B05NWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 330A IDM, and 0.008 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Enhances performance in power management systems with its high current handling capabilities.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

114 A

17 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

165 W

330 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON