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136 W Power Field Effect Transistors (FET) 23

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STL70N10F3 by STMicroelectronics

STL70N10F3

STMicroelectronics

STL70N10F3 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 64A IDM, 770mJ EAS, and 0.0084 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power circuits.

770 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

82 A

58 A

.0084 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

136 W

64 A

FET General Purpose Powers

YES

FLAT

DUAL

SWITCHING

SILICON

NVB6413ANT4G by Onsemi

NVB6413ANT4G

Onsemi

NVB6413ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 178A IDM. Ideal for applications requiring high power dissipation up to 136W, such as automotive systems due to AEC-Q101 standard compliance.

200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

42 A

42 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

136 W

178 A

AEC-Q101

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SILICON

IPD110N12N3GBUMA1 by Infineon Technologies

IPD110N12N3GBUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 2; Avalanche Energy Rating (EAS): 120 mJ;

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

120 V

75 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

136 W

300 A

Not Qualified

YES

GULL WING

SINGLE

SWITCHING

SILICON

IPS110N12N3GBKMA1 by Infineon Technologies

IPS110N12N3GBKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Avalanche Energy Rating (EAS): 120 mJ; Operating Mode: ENHANCEMENT MODE;

120 mJ

SINGLE WITH BUILT-IN DIODE

120 V

75 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

136 W

300 A

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPB067N08N3GATMA1 by Infineon Technologies

IPB067N08N3GATMA1

Infineon Technologies

Infineon's IPB067N08N3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, 320A IDM, and 0.0067 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. The PLASTIC/EPOXY package with GULL WING terminals ensures reliable performance in various environments.

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

80 A

80 A

.0067 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

136 W

320 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

STP90N6F6 by STMicroelectronics

STP90N6F6

STMicroelectronics

STMicroelectronics' STP90N6F6 is a N-CHANNEL FET with 90A ID and 136W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors. Its metal-oxide semiconductor technology ensures efficient performance in single configurations.

SINGLE

90 A

90 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

136 W

FET General Purpose Power

NO

NOT SPECIFIED

IPD30N06S2-15 by Infineon Technologies

IPD30N06S2-15

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Operating Temperature: 175 Cel; Maximum Drain-Source On Resistance: .0147 ohm;

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

30 A

30 A

.0147 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

136 W

120 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

40

SILICON

IPD30N06S2L-13 by Infineon Technologies

IPD30N06S2L-13

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Case Connection: DRAIN; No. of Terminals: 2;

LOGIC LEVEL COMPATIBLE

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

30 A

30 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

136 W

200 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP80N04S3-04 by Infineon Technologies

IPP80N04S3-04

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum DS Breakdown Voltage: 40 V; Maximum Drain-Source On Resistance: .0042 ohm;

ULTRA LOW RESISTANCE

290 mJ

SINGLE WITH BUILT-IN DIODE

40 V

80 A

80 A

.0042 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

136 W

320 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

PHD34NQ10T,118 by NXP Semiconductors

PHD34NQ10T,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Drain Current (ID): 35 A; Maximum Drain Current (Abs) (ID): 35 A;

170 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

35 A

35 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

136 W

140 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB6413ANG by Onsemi

NTB6413ANG

Onsemi

NTB6413ANG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 178A IDM, and 0.028 ohm RDS(on). Ideal for applications requiring high power dissipation up to 136W in enhancement mode operation. Suitable for surface mount designs due to GULL WING terminals and small outline package style.

200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

42 A

42 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

136 W

178 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SILICON

IPI070N08N3G by Infineon Technologies

IPI070N08N3G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 80 V;

150 mJ

SINGLE WITH BUILT-IN DIODE

80 V

80 A

80 A

.0067 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

136 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP070N08N3G by Infineon Technologies

IPP070N08N3G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum DS Breakdown Voltage: 80 V; Avalanche Energy Rating (EAS): 150 mJ;

150 mJ

SINGLE WITH BUILT-IN DIODE

80 V

80 A

80 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

136 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUK9618-55A,118 by NXP Semiconductors

BUK9618-55A,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 127 mJ;

127 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

61 A

61 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

136 W

246 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

30

SWITCHING

SILICON

SPD50N03S2-07G by Infineon Technologies

SPD50N03S2-07G

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;

AVALANCHE RATED

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.0073 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

136 W

200 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SILICON

IPB80N06S3L-06 by Infineon Technologies

IPB80N06S3L-06

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Additional Features: LOGIC LEVEL COMPATIBLE; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0056 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

136 W

320 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPP80N06S3L-06 by Infineon Technologies

IPP80N06S3L-06

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Avalanche Energy Rating (EAS): 250 mJ; Maximum Operating Temperature: 175 Cel;

LOGIC LEVEL COMPATIBLE

250 mJ

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

136 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMT3002LPS-13 by Diodes Incorporated

DMT3002LPS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;

700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

240 A

.0025 ohm

METAL-OXIDE SEMICONDUCTOR

300 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

136 W

400 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMTH6004SCT by Diodes Incorporated

DMTH6004SCT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 3;

200 mJ

SINGLE WITH BUILT-IN DIODE

60 V

100 A

.00365 ohm

METAL-OXIDE SEMICONDUCTOR

105 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

136 W

180 A

MIL-STD-202

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMTH10H4M5LPS-13 by Diodes Incorporated

DMTH10H4M5LPS-13

Diodes Incorporated

DMTH10H4M5LPS-13 by Diodes Inc. is a N-channel Power FET with 100V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 400A and an avalanche energy rating of 240mJ, operating in enhancement mode. This small outline package FET has a max power dissipation of 136W and can withstand temperatures up to 175°C.

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

100 A

100 A

.043 ohm

METAL-OXIDE SEMICONDUCTOR

25.5 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

136 W

400 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

C3M0075120D-A by Wolfspeed

C3M0075120D-A

Wolfspeed

C3M0075120D-A by Wolfspeed is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 80A and 0.09 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this SILICON CARBIDE transistor has a max temp of 175 °C and package style FLANGE MOUNT.

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

32 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

2 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

136 W

80 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

DMTH10H4M5LPSWQ-13 by Diodes Incorporated

DMTH10H4M5LPSWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

107 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

25.5 pF

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

136 W

428 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

SWITCHING

SILICON

DMTH10H4M5LPSW-13 by Diodes Incorporated

DMTH10H4M5LPSW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 8; Terminal Position: DUAL;

240 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

107 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

25.5 pF

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

136 W

428 A

MIL-STD-202

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

SWITCHING

SILICON