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134 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFWS0D7N04XMT1G by Onsemi

NVMFWS0D7N04XMT1G

Onsemi

NVMFWS0D7N04XMT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 987mJ EAS. Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance and high drain current capacity.

987 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

331 A

.0007 ohm

METAL-OXIDE SEMICONDUCTOR

112 pF

R-PDSO-F5

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

134 W

900 A

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SILICON

STD134N4F7AG by STMicroelectronics

STD134N4F7AG

STMicroelectronics

STD134N4F7AG by STMicroelectronics is a high-performance N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates efficiently at temperatures up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.

BULK: 2500

325 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

80 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

60 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

134 W

320 A

AEC-Q101

YES

GULL WING

SINGLE

SWITCHING

SILICON

NTMYS1D2N04CLTWG by Onsemi

NTMYS1D2N04CLTWG

Onsemi

NTMYS1D2N04CLTWG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 900A IDM. Ideal for applications requiring high power dissipation, it operates in enhancement mode with a max temperature of 175 °C. The transistor features a low on-resistance of 0.0017 ohm and built-in diode, making it suitable for various power management systems.

1359 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

258 A

258 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

118 pF

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

134 W

900 A

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

SCT3105KLGC11 by ROHM

SCT3105KLGC11

ROHM

ROHM's SCT3105KLGC11 is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 24A Drain Current, 0.137 ohm On Resistance, and 175°C Operating Temperature.

SINGLE WITH BUILT-IN DIODE

1200 V

24 A

24 A

.137 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

134 W

60 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

NXH027B120MNF2PTG by Onsemi

NXH027B120MNF2PTG

Onsemi

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 134 W; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;

ISOLATED

COMPLEX

1200 V

84 A

84 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

64 pF

R-XUFM-X23

3

23

DEPLETION MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

134 W

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE