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127 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFS5832NLT1G by Onsemi

NVMFS5832NLT1G

Onsemi

NVMFS5832NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 120A Drain Current, and 0.0072 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package suitable for high-power applications like motor control and power supplies. Operating in ENHANCEMENT MODE, it can handle up to 523A Pulsed Drain Current.

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

127 W

523 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NVMFS5832NLT3G by Onsemi

NVMFS5832NLT3G

Onsemi

NVMFS5832NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 120A Drain Current, and 0.0072 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for high-power applications requiring fast switching capabilities. Operating in ENHANCEMENT MODE, it offers a max power dissipation of 127W at temperatures up to 175°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

120 A

120 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

127 W

523 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

IPP50R190CEXKSA1 by Infineon Technologies

IPP50R190CEXKSA1

Infineon Technologies

IPP50R190CEXKSA1 by Infineon is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 63A max pulsed drain current and 0.19 ohm max drain-source resistance. The transistor operates in enhancement mode and has a package style of flange mount.

339 mJ

SINGLE WITH BUILT-IN DIODE

500 V

18.5 A

18.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

127 W

63 A

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW50R190CEFKSA1 by Infineon Technologies

IPW50R190CEFKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 127 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 18.5 A;

339 mJ

SINGLE WITH BUILT-IN DIODE

500 V

18.5 A

18.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

127 W

63 A

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NVMFS5832NLWFT1G by Onsemi

NVMFS5832NLWFT1G

Onsemi

NVMFS5832NLWFT1G by Onsemi is a single N-channel Power FET with 120A max drain current and 127W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features metal-oxide semiconductor technology. Suitable for surface mount assembly with matte tin finish, it offers reliable performance in demanding environments.

SINGLE

120 A

120 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

127 W

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

30