Loading...

119 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH020P120MNF1PG by Onsemi

NXH020P120MNF1PG

Onsemi

NXH020P120MNF1PG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 153A IDM, and 0.03ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode & thermistor. Operating in enhancement mode, this MOSFET has a max power dissipation of 119W and operates b/w -40 to 175 °C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

51 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

119 W

153 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

AONS62614 by Alpha & Omega Semiconductor

AONS62614

Alpha & Omega Semiconductor

AONS62614 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 265mJ EAS, and 0.0034 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 119W in a SMALL OUTLINE package.

265 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

100 A

100 A

.0034 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

119 W

320 A

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AONS66402 by Alpha & Omega Semiconductor

AONS66402

Alpha & Omega Semiconductor

AONS66402 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 40V DS Breakdown Voltage, 340A IDM, and 0.0023 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating range from -55 to 150 °C makes it suitable for various power management needs.

406 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

85 A

85 A

.0023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

119 W

340 A

YES

FLAT

DUAL

SWITCHING

SILICON

NXH020F120MNF1PG by Onsemi

NXH020F120MNF1PG

Onsemi

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 119 W; Transistor Element Material: SILICON CARBIDE; Package Body Material: UNSPECIFIED;

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

51 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

119 W

153 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH020F120MNF1PTG by Onsemi

NXH020F120MNF1PTG

Onsemi

NXH020F120MNF1PTG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 153A IDM, and 0.03 ohm RDS(on). Ideal for SWITCHING applications, it features a BRIDGE configuration with 4 elements, SILICON CARBIDE material, and operates b/w -40 to 175 °C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

51 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

119 W

153 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE