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114 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NDD60N360U1-1G by Onsemi

NDD60N360U1-1G

Onsemi

NDD60N360U1-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 44A IDM, and 64mJ EAS. Ideal for applications requiring high power dissipation in single-channel configurations with built-in diode, such as industrial motor drives or power supplies.

64 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

11 A

11 A

.36 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

114 W

44 A

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

30

SILICON

NDD60N360U1T4G by Onsemi

NDD60N360U1T4G

Onsemi

NDD60N360U1T4G by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS. Ideal for power applications, it operates in Enhancement Mode with 114W Power Dissipation and 150 °C Max Temp.

64 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

11 A

11 A

.36 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

114 W

44 A

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SILICON

BSC159N10LSFGATMA1 by Infineon Technologies

BSC159N10LSFGATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 114 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;

LOGIC LEVEL COMPATIBLE

155 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

63 A

9.4 A

.0159 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

114 W

252 A

Not Qualified

FET General Purpose Powers

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

IRFH5106TR2PBF by International Rectifier

IRFH5106TR2PBF

International Rectifier

IRFH5106TR2PBF by International Rectifier is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 96mJ, operating in ENHANCEMENT MODE at up to 150°C. This surface mount transistor has a Drain Current of 21A and 0.0056 ohm On Resistance.

96 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

100 A

21 A

.0056 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

114 W

400 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

NVTYS006N06CLTWG by Onsemi

NVTYS006N06CLTWG

Onsemi

NVTYS006N06CLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 440A IDM, and 0.005 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for applications requiring high power dissipation and low on-resistance. Ideal for automotive electronics due to AEC-Q101 compliance and 175 °C operating temperature.

142 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

18 A

18 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

R-PDSO-X5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

114 W

440 A

AEC-Q101

YES

MATTE TIN

UNSPECIFIED

DUAL

30

SILICON

DMT10H9M9SH3 by Diodes Incorporated

DMT10H9M9SH3

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 114 W; JESD-30 Code: R-PSIP-T3; Avalanche Energy Rating (EAS): 181.5 mJ;

181.5 mJ

SINGLE WITH BUILT-IN DIODE

100 V

84 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

13 pF

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

114 W

336 A

MIL-STD-202

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON