Loading...

104 W Power Field Effect Transistors (FET) 16

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AOD5N50 by Alpha & Omega Semiconductor

AOD5N50

Alpha & Omega Semiconductor

AOD5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 17A Pulsed Drain Current, 235mJ Avalanche Energy Rating, and 1.6ohm Drain-Source On Resistance. Suitable for high-power operations in various electronic devices.

235 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

5 A

5 A

1.6 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-50 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

104 W

17 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

AOD4N60 by Alpha & Omega Semiconductor

AOD4N60

Alpha & Omega Semiconductor

AOD4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 14A max pulsed drain current, 235mJ avalanche energy rating, and 2.3ohm max drain-source resistance. Suitable for enhancement mode operation in high-power circuits.

235 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

4 A

4 A

2.3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

104 W

14 A

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPW60R250CP by Infineon Technologies

IPW60R250CP

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Drain-Source On Resistance: .25 ohm; Package Style (Meter): FLANGE MOUNT;

345 mJ

SINGLE WITH BUILT-IN DIODE

600 V

12 A

12 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

104 W

40 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP9NK60Z by STMicroelectronics

STP9NK60Z

STMicroelectronics

STP9NK60Z by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 28A IDM and 0.95 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 104W and can handle up to 150°C.

235 mJ

SINGLE WITH BUILT-IN DIODE

600 V

7 A

7 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

104 W

28 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB6NK60Z-1 by STMicroelectronics

STB6NK60Z-1

STMicroelectronics

STB6NK60Z-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 24A IDM, and 1.2 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W.

210 mJ

SINGLE WITH BUILT-IN DIODE

600 V

6 A

6 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

104 W

24 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB9NK60ZDT4 by STMicroelectronics

STB9NK60ZDT4

STMicroelectronics

STB9NK60ZDT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.

235 mJ

SINGLE WITH BUILT-IN DIODE

600 V

7 A

7 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

104 W

28 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STP9NK60ZD by STMicroelectronics

STP9NK60ZD

STMicroelectronics

STP9NK60ZD by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 28A max pulsed drain current and 235mJ avalanche energy rating. The transistor operates in enhancement mode with 0.95 ohm max on-resistance, suitable for high-power applications up to 104W at 150°C.

235 mJ

SINGLE WITH BUILT-IN DIODE

600 V

7 A

7 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

104 W

28 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSC022N03S by Infineon Technologies

BSC022N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; No. of Terminals: 8; Transistor Element Material: SILICON;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

800 mJ

SINGLE WITH BUILT-IN DIODE

30 V

28 A

28 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

104 W

200 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

NO LEAD

DUAL

SWITCHING

SILICON

SPI08N80C3 by Infineon Technologies

SPI08N80C3

Infineon Technologies

Infineon's SPI08N80C3 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. It features 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with max temp of 150°C, making it suitable for high-power circuits.

AVALANCHE RATED, HIGH VOLTAGE

340 mJ

SINGLE WITH BUILT-IN DIODE

800 V

8 A

8 A

.65 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

104 W

24 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPI90R800C3 by Infineon Technologies

IPI90R800C3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; JEDEC-95 Code: TO-262AA; JESD-30 Code: R-PSIP-T3;

157 mJ

SINGLE WITH BUILT-IN DIODE

900 V

6.9 A

6.9 A

.8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

104 W

15 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

BSC022N03SG by Infineon Technologies

BSC022N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

28 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

104 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

BSC020N025SG by Infineon Technologies

BSC020N025SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Moisture Sensitivity Level (MSL): 3; Package Style (Meter): SMALL OUTLINE;

AVALANCHE RATED

800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

100 A

29 A

.0031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

104 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

IPP60R280P6XKSA1 by Infineon Technologies

IPP60R280P6XKSA1

Infineon Technologies

Infineon's IPP60R280P6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 39A max pulsed drain current and 0.28 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 104W and can handle up to 150°C temperature.

285 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

13.8 A

.28 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

104 W

39 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW60R280P6FKSA1 by Infineon Technologies

IPW60R280P6FKSA1

Infineon Technologies

IPW60R280P6FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage. It has a max IDM of 39A and EAS of 285mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.28 ohm RDS(on) and can handle up to 104W power dissipation.

285 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

13.8 A

.28 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

104 W

39 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTMFS4H013NFT3G by Onsemi

NTMFS4H013NFT3G

Onsemi

NTMFS4H013NFT3G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 505A IDM, and 0.0014 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 150 °C max temp.

390 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

269 A

43 A

.0014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

104 W

505 A

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMJ70H600HCT by Diodes Incorporated

DMJ70H600HCT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Drain-Source On Resistance: .6 ohm; Transistor Element Material: SILICON;

97 mJ

SINGLE WITH BUILT-IN DIODE

700 V

8.5 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

104 W

34 A

MIL-STD-202

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON