Loading...

1.75 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PMN38EN,135 by NXP Semiconductors

PMN38EN,135

NXP Semiconductors

PMN38EN,135 by NXP Semiconductors is an N-CHANNEL FET with 5.4A max drain current and 1.75W power dissipation in enhancement mode. Ideal for applications requiring high power efficiency at up to 150°C operating temperature, it features a metal-oxide semiconductor technology suitable for surface mount configurations.

SINGLE

5.4 A

5.4 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

1.75 W

FET General Purpose Power

YES

TIN

30

PMN49EN,135 by NXP Semiconductors

PMN49EN,135

NXP Semiconductors

PMN49EN,135 by NXP Semiconductors is a single N-channel Power FET with 4.6A max drain current and 1.75W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation at up to 150°C, making it suitable for various power management systems.

SINGLE

4.6 A

4.6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

1.75 W

FET General Purpose Power

YES

TIN

30

NVD20N03L27T4G by Onsemi

NVD20N03L27T4G

Onsemi

NVD20N03L27T4G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 288mJ EAS rating.

ULTRA LOW ON-RESISTANCE

288 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

20 A

20 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.75 W

60 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTD20N03L27 by Onsemi

NTD20N03L27

Onsemi

NTD20N03L27 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it ideal for high-power switching circuits.

AVALANCHE RATED

288 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

20 A

20 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.75 W

60 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD20N03L27G by Onsemi

NTD20N03L27G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.75 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 20 A;

AVALANCHE RATED

288 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

20 A

20 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.75 W

60 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTD20N03L27-1G by Onsemi

NTD20N03L27-1G

Onsemi

NTD20N03L27-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Features include built-in diode, 288mJ EAS rating, and SILICON element material.

AVALANCHE RATED

288 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

20 A

20 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

1.75 W

60 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MTB50P03HDLG by Onsemi

MTB50P03HDLG

Onsemi

MTB50P03HDLG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 150A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor features a built-in DIODE and operates at up to 150°C.

AVALANCHE RATED

1250 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

50 A

50 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.75 W

150 A

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON