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1.4 W Power Field Effect Transistors (FET) 16

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMN3112SQ-7 by Diodes Incorporated

DMN3112SQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Additional Features: HIGH RELIABILITY; No. of Terminals: 3;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

30 V

5.8 A

5.8 A

.057 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.4 W

20 A

AEC-Q101

FET General Purpose Powers

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

EMH2411R-TL-H by Onsemi

EMH2411R-TL-H

Onsemi

EMH2411R-TL-H by Onsemi is a N-CHANNEL FET with 5A max drain current and 1.4W power dissipation. Ideal for applications requiring high efficiency in power management systems, it operates at up to 150 °C with surface mount capability.

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

N-CHANNEL

1.4 W

FET General Purpose Powers

YES

TIN BISMUTH

TPIC5403DW by Texas Instruments

TPIC5403DW

Texas Instruments

TPIC5403DW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 11.25A Max Pulsed Drain Current, and 17.2mJ Avalanche Energy Rating. With a GULL WING terminal form and ENHANCEMENT MODE operation, it offers efficient power management in various electronic systems.

ESD PROTECTED

17.2 mJ

ISOLATED

COMPLEX

60 V

2.3 A

2.25 A

.27 ohm

METAL-OXIDE SEMICONDUCTOR

75 pF

MS-013AD

R-PDSO-G24

4

24

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.39 W

1.4 W

11.25 A

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

65 ns

85 ns

TPIC5621LDW by Texas Instruments

TPIC5621LDW

Texas Instruments

TPIC5621LDW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 3A Max Pulsed Drain Current, and 18mJ Avalanche Energy Rating. With GULL WING terminals and ENHANCEMENT MODE operation, it offers fast switching capabilities in a SMALL OUTLINE package.

LOGIC LEVEL COMPATIBLE

18 mJ

COMPLEX

60 V

1 A

1 A

.48 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

MS-013AC

R-PDSO-G20

6

20

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.389 W

1.4 W

3 A

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

82 ns

110 ns

TPIC5424LDW by Texas Instruments

TPIC5424LDW

Texas Instruments

TPIC5424LDW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 3A Pulsed Drain Current, and 0.48 ohm Drain-Source On Resistance. With a package style of SMALL OUTLINE, it operates in ENHANCEMENT MODE with max power dissipation of 1.4W at 150°C.

LOGIC LEVEL COMPATIBLE

180 mJ

ISOLATED

COMPLEX

60 V

1 A

1 A

.48 ohm

METAL-OXIDE SEMICONDUCTOR

125 pF

MS-013AC

R-PDSO-G20

4

20

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.389 W

1.4 W

3 A

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

132 ns

110 ns

TPIC2701N by Texas Instruments

TPIC2701N

Texas Instruments

TPIC2701N by Texas Instruments is a N-CHANNEL FET with 7 elements, built-in diode, and 60V DS breakdown voltage. It's commonly used for switching applications due to its 3A pulsed drain current, 22mJ avalanche energy rating, and 0.9 ohm max on-resistance. Operating in enhancement mode at up to 150°C, it offers high performance in a compact IN-LINE package.

22 mJ

COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE

60 V

.5 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

MS-001BB

R-PDIP-T16

7

16

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

1.4 W

3 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

DMN2104L-7 by Diodes Incorporated

DMN2104L-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Minimum DS Breakdown Voltage: 20 V; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

20 V

4.3 A

4.3 A

.053 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.4 W

15 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN3052L-7 by Diodes Incorporated

DMN3052L-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 30 V;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

30 V

5.4 A

5.4 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.4 W

19 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN3112S-7 by Diodes Incorporated

DMN3112S-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

30 V

5.8 A

5.8 A

.057 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.4 W

20 A

Not Qualified

FET General Purpose Powers

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMP3120L-7 by Diodes Incorporated

DMP3120L-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

30 V

2.8 A

2.8 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.4 W

9 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

MCQ4459-TP by Micro Commercial Components

MCQ4459-TP

Micro Commercial Components

MCQ4459-TP by Micro Commercial Components is a P-CHANNEL FET with 30V DS Breakdown Voltage, 26A IDM, and 0.046 ohm RDS. Ideal for power applications in small outline packages, operating from -55 to 150 °C.

14 mJ

SINGLE WITH BUILT-IN DIODE

30 V

6.5 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

90 pF

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.4 W

26 A

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

DMC2025UFDB-13 by Diodes Incorporated

DMC2025UFDB-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Package Style (Meter): SMALL OUTLINE; Terminal Finish: NICKEL PALLADIUM GOLD;

8.5 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

77 pF

R-PDSO-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.4 W

20 A

MIL-STD-202

NO

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

AO3400 by Alpha & Omega Semiconductor

AO3400

Alpha & Omega Semiconductor

AO3400 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.8A ID. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE.

SINGLE WITH BUILT-IN DIODE

30 V

5.8 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.4 W

30 A

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

EFC2K101NUZTDG by Onsemi

EFC2K101NUZTDG

Onsemi

EFC2K101NUZTDG by Onsemi is a N-CHANNEL Power FET with COMMON DRAIN configuration. It features 2 elements, built-in diode and resistor, suitable for SWITCHING applications. Operating in DEPLETION MODE, it has a max power dissipation of 1.4W and can withstand temperatures from -55 to 150 °C.

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N6

2

6

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

1.4 W

YES

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

DMC2025UFDBQ-13 by Diodes Incorporated

DMC2025UFDBQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Avalanche Energy Rating (EAS): 8.5 mJ; Case Connection: DRAIN;

8.5 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

77 pF

R-PDSO-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.4 W

20 A

AEC-Q101; IATF 16949; MIL-STD-202

NO

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMN2024UQ-13 by Diodes Incorporated

DMN2024UQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260;

SINGLE WITH BUILT-IN DIODE

20 V

6.8 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.4 W

45 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON