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.18 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BF1218,115 by NXP Semiconductors

BF1218,115

NXP Semiconductors

BF1218,115 by NXP Semiconductors is an N-channel power FET designed for dual gate enhancement mode applications. It supports a max drain current of 30 mA and power dissipation of 180 mW, operating up to 150 °C. Ideal for efficient signal amplification in compact devices.

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

DUAL GATE, ENHANCEMENT MODE

150 Cel

N-CHANNEL

.18 W

FET General Purpose Power

YES

BF1217WR,115 by NXP Semiconductors

BF1217WR,115

NXP Semiconductors

BF1217WR,115 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max drain current of 30 mA, power dissipation of 180 mW, and operates at up to 150 °C. Ideal for dual-gate applications in compact electronic devices.

SINGLE

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

1

DUAL GATE, ENHANCEMENT MODE

150 Cel

N-CHANNEL

.18 W

FET General Purpose Power

YES

BF1215,115 by NXP Semiconductors

BF1215,115

NXP Semiconductors

BF1215,115 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It features a max drain current of 30 mA, power dissipation of 180 mW, and operates up to 150 °C. Ideal for dual-gate applications in compact electronic devices.

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

DUAL GATE, ENHANCEMENT MODE

150 Cel

N-CHANNEL

.18 W

FET General Purpose Power

YES

BF1216,115 by NXP Semiconductors

BF1216,115

NXP Semiconductors

BF1216,115 by NXP Semiconductors is a N-CHANNEL Power FET with DUAL GATE, ENHANCEMENT MODE. It features a max drain current of 0.03A and power dissipation of 0.18W. Ideal for applications requiring high efficiency in power management systems at temperatures up to 150°C.

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

DUAL GATE, ENHANCEMENT MODE

150 Cel

N-CHANNEL

.18 W

FET General Purpose Power

YES